@inproceedings{bcb8ed7de8cc42a6a056994c66f5bca2,
title = "Crystallization behavior of Ge2Te3-TiO2 film for phase-change random access memory application",
abstract = "Crystallization behavior of the Ge2Te3-TiO 2 films prepared by the co-sputtering using Ge2Te 3 and TiO2 targets was investigated by in situ resistance-temperature measurement and transmission electron microscopy. The crystallization kinetic parameters including rate factor and kinetics exponent were obtained by the non-isothermal change in resistance using Kissinger's plot and Ozawa's method. The average kinetics exponent was estimated by the nonisothermal change in resistance. Compared with other studied compositions, the composition with TiO2 concentration of 5 at.\% exhibited shorter crystallization time which was calculated by the Johnson-Mehl-Avrami equation. The crystallization behavior of Ge2Te3-TiO2 film was verified by the transition electron microscopy at different annealing temperature. With the short crystallization time and high crystallization temperature, the compositions with TiO2 concentration of 5-15 at.\% may be one of the competing candidates for phase change memory application.",
keywords = "Crystallization, GeTe, Kinetics, Nanocomposite, Phase change memory",
author = "Yegang Lu and Sannian Song and Zhitang Song and Yan Cheng and Liangcai Wu and Bo Liu",
year = "2013",
doi = "10.1117/12.2018637",
language = "英语",
isbn = "9780819495853",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage",
note = "2012 International Workshop on Information Storage, IWIS 2012 and 9th International Symposium on Optical Storage, ISOS 2012 ; Conference date: 21-10-2012 Through 24-10-2012",
}