Crystalline perfection of Hg_1-xCd_xTe epilayers by the vertical dipping liquid-phase epitaxy

The crystalline perfection of bulk Hg_1-xCd_xTe layers grown by the vertical dipping LPE on CdZnTe substrates has been studied from the X-ray double crystal rocking curve (DCRC) and scanning electron microscopy (SEM) techniques. The structural quality of Hg_1-xCd_xTe bulk epilayers is better than that of the interface between the substrate and epilayer. The full width at half maximum (FWHM) of DCRCs was measured on a two-dimensional array of points over epilayer surface. Therefore the map of the structural uniformity of Hg_1-xCd_xTe epilayers can be obtained in this way. The structural uniformity of the bulk Hg_1-xCd_xTe epilayers is also observed in the growth direction. The dislocation density map of Hg^1-xCd_xTe bulk epilayer is calculated using the map of the FWHM values.