Critical anodization temperature for optical transition of porous silicon

Li Kun Pan; Hai Bo Li; Zhuo Sun; Chang Qing Sun

Critical anodization temperature for optical transition of porous silicon

Li Kun Pan^*
, Hai Bo Li
, Zhuo Sun
, Chang Qing Sun

^*此作品的通讯作者

East China Normal University
Nanyang Technological University

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

The porous silicon (PS) samples were prepared at different anodization temperature. Photoluminescence, photo-absorbance, and X-ray photoelectron spectroscopies were used to study the structural and optical behavior of the PS. The results showed that an optical transition of porous silicon from red shift to blue shift, and Si-2p binding energy transition from low to high ata critical anodization temperature, 343 K.

源语言	英语
页（从-至）	165-168
页数	4
期刊	Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices
卷	15
期	2
出版状态	已出版 - 4月 2009
已对外发布	是

联合国可持续发展目标

此成果有助于实现下列可持续发展目标：

可持续发展目标 7 经济适用的清洁能源

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引用此

@article{4f3cd093a4a6453fab5ff75a0aaaf976,

title = "Critical anodization temperature for optical transition of porous silicon",

abstract = "The porous silicon (PS) samples were prepared at different anodization temperature. Photoluminescence, photo-absorbance, and X-ray photoelectron spectroscopies were used to study the structural and optical behavior of the PS. The results showed that an optical transition of porous silicon from red shift to blue shift, and Si-2p binding energy transition from low to high ata critical anodization temperature, 343 K.",

keywords = "Anodization, Optical behavior, Porous silicon",

author = "Pan, \{Li Kun\} and Li, \{Hai Bo\} and Zhuo Sun and Sun, \{Chang Qing\}",

year = "2009",

month = apr,

language = "英语",

volume = "15",

pages = "165--168",

journal = "Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices",

issn = "1007-4252",

publisher = "Chinese Academy of Sciences",

number = "2",

}

TY - JOUR

T1 - Critical anodization temperature for optical transition of porous silicon

AU - Pan, Li Kun

AU - Li, Hai Bo

AU - Sun, Zhuo

AU - Sun, Chang Qing

PY - 2009/4

Y1 - 2009/4

N2 - The porous silicon (PS) samples were prepared at different anodization temperature. Photoluminescence, photo-absorbance, and X-ray photoelectron spectroscopies were used to study the structural and optical behavior of the PS. The results showed that an optical transition of porous silicon from red shift to blue shift, and Si-2p binding energy transition from low to high ata critical anodization temperature, 343 K.

AB - The porous silicon (PS) samples were prepared at different anodization temperature. Photoluminescence, photo-absorbance, and X-ray photoelectron spectroscopies were used to study the structural and optical behavior of the PS. The results showed that an optical transition of porous silicon from red shift to blue shift, and Si-2p binding energy transition from low to high ata critical anodization temperature, 343 K.

KW - Anodization

KW - Optical behavior

KW - Porous silicon

UR - https://www.scopus.com/pages/publications/84862093286

M3 - 文章

AN - SCOPUS:84862093286

SN - 1007-4252

VL - 15

SP - 165

EP - 168

JO - Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices

JF - Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices

IS - 2

ER -

Critical anodization temperature for optical transition of porous silicon

摘要

联合国可持续发展目标

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指纹

引用此