@inproceedings{05ee03d413e34af8a1cde99c1317f540,
title = "Creating excitons in II-VI quantum wells with large binding energies",
abstract = "The wide bandgap II-VI semiconductors have unique properties which' allow the possibility of suppressing the exciton-phonon scattering up to room temperature in quantum well structures designed so that the exciton excitation E15→2s > hvLO. High quality ZnSe quantum wells in MgS and ZnS quantum wells in ZnMgS have been grown by MBE and these have excellent optical properties. Magnetic field and linewidth temperature dependent measurements have been used to determine the exciton binding energies and to investigate the exciton-LO phonon scattering processes. The results show the possibility of suppressing exciton-LO phonon scattering in these structures.",
author = "B. Urbaszek and C. Morhain and C. Bradford and O'Donnell, \{C. B.\} and Telfer, \{S. A.\} and X. Tang and A. Balocchi and Prior, \{K. A.\} and Cavenett, \{B. C.\} and Townsley, \{C. M.\} and Nicholas, \{R. J.\}",
note = "Publisher Copyright: {\textcopyright} 2000 IEEE.; Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000 ; Conference date: 06-12-2000 Through 08-12-2000",
year = "2000",
doi = "10.1109/COMMAD.2000.1022894",
language = "英语",
series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "73--80",
editor = "Broekman, \{Leonard D.\} and Usher, \{Brian F.\} and Riley, \{John D.\}",
booktitle = "COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices",
address = "美国",
}