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Conduction control at ferroic domain walls via external stimuli

  • J. C. Yang
  • , C. H. Yeh
  • , Y. T. Chen
  • , S. C. Liao
  • , R. Huang
  • , H. J. Liu
  • , C. C. Hung
  • , S. H. Chen
  • , S. L. Wu
  • , C. H. Lai
  • , Y. P. Chiu
  • , P. W. Chiu
  • , Y. H. Chu*
  • *此作品的通讯作者
  • National Yang Ming Chiao Tung University
  • National Tsing Hua University
  • National Sun Yat-sen University
  • Thintech Materials Technology Co., LTD.

科研成果: 期刊稿件文章同行评审

摘要

Intriguing functionalities at nano-sized domain walls have recently spawned a new paradigm for developing novel nanoelectronics due to versatile characteristics. In this study, we explore a new scenario to modulate the local conduction of ferroic domain walls. Three controlling parameters, i.e., external electrical field, magnetic field and light, are introduced to the 90° domain walls (90° DWs) of BiFeO3. Electrical modulation is realized by electrical transport, where the mobility of 90° DWs can be altered by gating voltage. We further use the ferromagnetic/antiferromagnetic coupling to reveal the inherent magnetism at the DWs. With an established magnetic nature, magnetotransport has been conducted to introduce magnetic controlling parameter, where a giant positive magnetoresistance change can be observed up to 200%. In addition, light modulated conduction, a core factor for multifunctional applications, is successfully demonstrated (current enhancement by a factor of 2 with 11 W white lamp). These results offer new insights to discover the tunability of domain wall nanoelectronics.

源语言英语
页(从-至)10524-10529
页数6
期刊Nanoscale
6
18
DOI
出版状态已出版 - 21 9月 2014

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