Comparison of Two Noise Equivalent Circuit Models for GaAs and InP High-Electron-Mobility Transistors

Ao Zhang; Jianjun Gao

doi:10.1109/TED.2024.3508670

Comparison of Two Noise Equivalent Circuit Models for GaAs and InP High-Electron-Mobility Transistors

Ao Zhang
, Jianjun Gao^*

^*此作品的通讯作者

物理与电子科学学院

Nantong University
Nanyang Technological University

科研成果: 期刊稿件 › 文章 › 同行评审

4 引用（Scopus）

摘要

This article presented a novel approach for the modeling of noise behavior for GaAs and InP high-electron-mobility transistors (HEMTs). Closed-form expressions for minimum noise figure F_min, noise resistance R_n, optimum source conductance G_opt, and optimum source susceptance B_opt based on the noise equivalent circuit model are derived. The model is verified by measurements of the four noise parameters of a GaAs HEMT up to 26 GHz and an InP HEMT up to 40 GHz. The W-band low noise amplifier (LNA) is designed to validate the noise model for HEMT.

源语言	英语
页（从-至）	154-161
页数	8
期刊	IEEE Transactions on Electron Devices
卷	72
期	1
DOI	https://doi.org/10.1109/TED.2024.3508670
出版状态	已出版 - 2025

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title = "Comparison of Two Noise Equivalent Circuit Models for GaAs and InP High-Electron-Mobility Transistors",

abstract = "This article presented a novel approach for the modeling of noise behavior for GaAs and InP high-electron-mobility transistors (HEMTs). Closed-form expressions for minimum noise figure Fmin, noise resistance Rn, optimum source conductance Gopt, and optimum source susceptance Bopt based on the noise equivalent circuit model are derived. The model is verified by measurements of the four noise parameters of a GaAs HEMT up to 26 GHz and an InP HEMT up to 40 GHz. The W-band low noise amplifier (LNA) is designed to validate the noise model for HEMT.",

keywords = "Equivalent circuit model, high-electron-mobility transistor (HEMT), noise model, parameter extraction",

author = "Ao Zhang and Jianjun Gao",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2025",

doi = "10.1109/TED.2024.3508670",

language = "英语",

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AU - Zhang, Ao

AU - Gao, Jianjun

PY - 2025

Y1 - 2025

N2 - This article presented a novel approach for the modeling of noise behavior for GaAs and InP high-electron-mobility transistors (HEMTs). Closed-form expressions for minimum noise figure Fmin, noise resistance Rn, optimum source conductance Gopt, and optimum source susceptance Bopt based on the noise equivalent circuit model are derived. The model is verified by measurements of the four noise parameters of a GaAs HEMT up to 26 GHz and an InP HEMT up to 40 GHz. The W-band low noise amplifier (LNA) is designed to validate the noise model for HEMT.

AB - This article presented a novel approach for the modeling of noise behavior for GaAs and InP high-electron-mobility transistors (HEMTs). Closed-form expressions for minimum noise figure Fmin, noise resistance Rn, optimum source conductance Gopt, and optimum source susceptance Bopt based on the noise equivalent circuit model are derived. The model is verified by measurements of the four noise parameters of a GaAs HEMT up to 26 GHz and an InP HEMT up to 40 GHz. The W-band low noise amplifier (LNA) is designed to validate the noise model for HEMT.

KW - Equivalent circuit model

KW - high-electron-mobility transistor (HEMT)

KW - noise model

KW - parameter extraction

UR - https://www.scopus.com/pages/publications/85211491216

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DO - 10.1109/TED.2024.3508670

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SN - 0018-9383

VL - 72

SP - 154

EP - 161

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 1

ER -

Comparison of Two Noise Equivalent Circuit Models for GaAs and InP High-Electron-Mobility Transistors

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