Comparison of the crystallization of Ge-Sb-Te and Si-Sb-Te in a constant-temperature annealing process

Ting Zhang; Yan Cheng; Zhitang Song; Bo Liu; Songlin Feng; Xiaodong Han; Ze Zhang; Bomy Chen

doi:10.1016/j.scriptamat.2008.01.048

Comparison of the crystallization of Ge-Sb-Te and Si-Sb-Te in a constant-temperature annealing process

Ting Zhang^*
, Yan Cheng
, Zhitang Song
, Bo Liu
, Songlin Feng
, Xiaodong Han
, Ze Zhang
, Bomy Chen

^*此作品的通讯作者

科研成果: 期刊稿件 › 文章 › 同行评审

18 引用（Scopus）

摘要

The crystallization of Ge-Sb-Te and Si-Sb-Te phase-change materials has been characterized by in situ time-dependent resistance measurement and transmission electron microscopy. Although silicon has various properties that are similar to those of germanium, Si-Sb-Te and Ge-Sb-Te crystallize via different processes. Si-Sb-Te has a complex structure (mainly hexagonal) while Ge-Sb-Te has a simple face-centered cubic structure when annealed at 433 K for several hours.

源语言	英语
页（从-至）	977-980
页数	4
期刊	Scripta Materialia
卷	58
期	11
DOI	https://doi.org/10.1016/j.scriptamat.2008.01.048
出版状态	已出版 - 6月 2008
已对外发布	是

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10.1016/j.scriptamat.2008.01.048

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title = "Comparison of the crystallization of Ge-Sb-Te and Si-Sb-Te in a constant-temperature annealing process",

abstract = "The crystallization of Ge-Sb-Te and Si-Sb-Te phase-change materials has been characterized by in situ time-dependent resistance measurement and transmission electron microscopy. Although silicon has various properties that are similar to those of germanium, Si-Sb-Te and Ge-Sb-Te crystallize via different processes. Si-Sb-Te has a complex structure (mainly hexagonal) while Ge-Sb-Te has a simple face-centered cubic structure when annealed at 433 K for several hours.",

keywords = "GeSbTe, Phase-change material, Phase-change memory, SiSbTe",

author = "Ting Zhang and Yan Cheng and Zhitang Song and Bo Liu and Songlin Feng and Xiaodong Han and Ze Zhang and Bomy Chen",

year = "2008",

month = jun,

doi = "10.1016/j.scriptamat.2008.01.048",

language = "英语",

volume = "58",

pages = "977--980",

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TY - JOUR

T1 - Comparison of the crystallization of Ge-Sb-Te and Si-Sb-Te in a constant-temperature annealing process

AU - Zhang, Ting

AU - Cheng, Yan

AU - Song, Zhitang

AU - Liu, Bo

AU - Feng, Songlin

AU - Han, Xiaodong

AU - Zhang, Ze

AU - Chen, Bomy

PY - 2008/6

Y1 - 2008/6

N2 - The crystallization of Ge-Sb-Te and Si-Sb-Te phase-change materials has been characterized by in situ time-dependent resistance measurement and transmission electron microscopy. Although silicon has various properties that are similar to those of germanium, Si-Sb-Te and Ge-Sb-Te crystallize via different processes. Si-Sb-Te has a complex structure (mainly hexagonal) while Ge-Sb-Te has a simple face-centered cubic structure when annealed at 433 K for several hours.

AB - The crystallization of Ge-Sb-Te and Si-Sb-Te phase-change materials has been characterized by in situ time-dependent resistance measurement and transmission electron microscopy. Although silicon has various properties that are similar to those of germanium, Si-Sb-Te and Ge-Sb-Te crystallize via different processes. Si-Sb-Te has a complex structure (mainly hexagonal) while Ge-Sb-Te has a simple face-centered cubic structure when annealed at 433 K for several hours.

KW - GeSbTe

KW - Phase-change material

KW - Phase-change memory

KW - SiSbTe

UR - https://www.scopus.com/pages/publications/40949157039

U2 - 10.1016/j.scriptamat.2008.01.048

DO - 10.1016/j.scriptamat.2008.01.048

M3 - 文章

AN - SCOPUS:40949157039

SN - 1359-6462

VL - 58

SP - 977

EP - 980

JO - Scripta Materialia

JF - Scripta Materialia

IS - 11

ER -

Comparison of the crystallization of Ge-Sb-Te and Si-Sb-Te in a constant-temperature annealing process

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