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Comparative raman scattering studies of gaas/alxga1-xas and alxga1-xas/alas superlattices

  • Zhang Wang*
  • , Han He-Xiang
  • , Chen Ye
  • , L. I. Guo-Hua
  • , Wang Zhao-Ping
  • *此作品的通讯作者
  • CAS - Institute of Semiconductors

科研成果: 期刊稿件文章同行评审

摘要

The room-temperature Raman scattering studies of longitudinal optic phonons in AlAs/AlxGa1-xAs and GaAs/AlxGai1-xAs short-period superlattices with different layer thicknesses were reported. The AlAs LO modes confined in AlAs layers and GaAs-like LO modes confined in AlxGa1-xAs layers were observed in AlAs/AlxGa1-xAs superlattices under off-resonance conditions. And the GaAs LO modes confined in GaAs layers and AlAs-like LO modes confined in AlxGa1-xAs layers were observed in GaAs/AlxGa1-xAs superlattices. In addition, the AlAs interface mode in AlAs/AlxGa1-xAs was also observed under near-resonance conditions. Based on the linear chain mode, the frequencies of confined LO modes measured by Raman scattering were unfolded according to q=m/n+1(2π0) , by which the dispersion curves of AlAs-like and GaAs-like LO phonons in AlxGa1-xAs mixed crystal were obtained.

源语言英语
页(从-至)193-194
页数2
期刊Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves
18
3
出版状态已出版 - 1999
已对外发布

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