Chemical insight into origin of forming-free resistive random-access memory devices

X. Wu; Z. Fang; K. Li; M. Bosman; N. Raghavan; X. Li; H. Y. Yu; N. Singh; G. Q. Lo; X. X. Zhang; K. L. Pey

doi:10.1063/1.3645623

Chemical insight into origin of forming-free resistive random-access memory devices

X. Wu
, Z. Fang
, K. Li
, M. Bosman
, N. Raghavan
, X. Li
, H. Y. Yu
, N. Singh
, G. Q. Lo
, X. X. Zhang
, K. L. Pey^*

^*此作品的通讯作者

Nanyang Technological University
Agency for Science, Technology and Research, Singapore
Singapore University of Technology and Design
King Abdullah University of Science and Technology

科研成果: 期刊稿件 › 文章 › 同行评审

14 引用（Scopus）

摘要

We demonstrate the realization of a forming-step free resistive random access memory (RRAM) device using a HfO_x/TiO_x/HfO _x/TiO_x multilayer structure, as a replacement for the conventional HfO_x-based single layer structure. High-resolution transmission electron microscopy (HRTEM), along with electron energy loss spectroscopy (EELS) analysis has been carried out to identify the distribution and the role played by Ti in the RRAM stack. Our results show that Ti out-diffusion into the HfO_x layer is the chemical cause of forming-free behavior. Moreover, the capability of Ti to change its ionic state in HfO_x eases the reduction-oxidation (redox) reaction, thus lead to the RRAM devices performance improvements.

源语言	英语
文章编号	133504
期刊	Applied Physics Letters
卷	99
期	13
DOI	https://doi.org/10.1063/1.3645623
出版状态	已出版 - 26 9月 2011
已对外发布	是

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title = "Chemical insight into origin of forming-free resistive random-access memory devices",

abstract = "We demonstrate the realization of a forming-step free resistive random access memory (RRAM) device using a HfOx/TiOx/HfO x/TiOx multilayer structure, as a replacement for the conventional HfOx-based single layer structure. High-resolution transmission electron microscopy (HRTEM), along with electron energy loss spectroscopy (EELS) analysis has been carried out to identify the distribution and the role played by Ti in the RRAM stack. Our results show that Ti out-diffusion into the HfOx layer is the chemical cause of forming-free behavior. Moreover, the capability of Ti to change its ionic state in HfOx eases the reduction-oxidation (redox) reaction, thus lead to the RRAM devices performance improvements.",

author = "X. Wu and Z. Fang and K. Li and M. Bosman and N. Raghavan and X. Li and Yu, \{H. Y.\} and N. Singh and Lo, \{G. Q.\} and Zhang, \{X. X.\} and Pey, \{K. L.\}",

year = "2011",

month = sep,

day = "26",

doi = "10.1063/1.3645623",

language = "英语",

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TY - JOUR

T1 - Chemical insight into origin of forming-free resistive random-access memory devices

AU - Wu, X.

AU - Fang, Z.

AU - Li, K.

AU - Bosman, M.

AU - Raghavan, N.

AU - Li, X.

AU - Yu, H. Y.

AU - Singh, N.

AU - Lo, G. Q.

AU - Zhang, X. X.

AU - Pey, K. L.

PY - 2011/9/26

Y1 - 2011/9/26

N2 - We demonstrate the realization of a forming-step free resistive random access memory (RRAM) device using a HfOx/TiOx/HfO x/TiOx multilayer structure, as a replacement for the conventional HfOx-based single layer structure. High-resolution transmission electron microscopy (HRTEM), along with electron energy loss spectroscopy (EELS) analysis has been carried out to identify the distribution and the role played by Ti in the RRAM stack. Our results show that Ti out-diffusion into the HfOx layer is the chemical cause of forming-free behavior. Moreover, the capability of Ti to change its ionic state in HfOx eases the reduction-oxidation (redox) reaction, thus lead to the RRAM devices performance improvements.

AB - We demonstrate the realization of a forming-step free resistive random access memory (RRAM) device using a HfOx/TiOx/HfO x/TiOx multilayer structure, as a replacement for the conventional HfOx-based single layer structure. High-resolution transmission electron microscopy (HRTEM), along with electron energy loss spectroscopy (EELS) analysis has been carried out to identify the distribution and the role played by Ti in the RRAM stack. Our results show that Ti out-diffusion into the HfOx layer is the chemical cause of forming-free behavior. Moreover, the capability of Ti to change its ionic state in HfOx eases the reduction-oxidation (redox) reaction, thus lead to the RRAM devices performance improvements.

UR - https://www.scopus.com/pages/publications/80053509943

U2 - 10.1063/1.3645623

DO - 10.1063/1.3645623

M3 - 文章

AN - SCOPUS:80053509943

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

M1 - 133504

ER -

Chemical insight into origin of forming-free resistive random-access memory devices

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