摘要
We investigate cesium (Cs) adsorption on graphene formed on a 6H-SiC(0001) substrate by a combined scanning tunneling microscopy and density functional theory study. Individual Cs atoms adsorb preferentially at the rim region of the well-defined 6×6 substrate superstructure and on multilayer graphene. By finely controlling the graphene thickness and Cs coverages (1/3ML and 1 ML), we here demonstrate two intriguing and well-ordered Cs superlattices on bilayer and multilayer graphene (<6 layers). Statistical analysis of the Cs-Cs interatomic distance reveals a hitherto unobserved Cs-Cs long-range electrostatic potential caused by charge transfer from Cs to graphene, which couples with the inhomogeneous substrate potential to stabilize the observed Cs superlattices. The present study provides a new avenue to fabricate atomic and molecular superlattices for applications in high-density recording and data storage.
| 源语言 | 英语 |
|---|---|
| 文章编号 | 156803 |
| 期刊 | Physical Review Letters |
| 卷 | 108 |
| 期 | 15 |
| DOI | |
| 出版状态 | 已出版 - 11 4月 2012 |
| 已对外发布 | 是 |
指纹
探究 'Charge-transfer-induced cesium superlattices on graphene' 的科研主题。它们共同构成独一无二的指纹。引用此
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