Characterization of localized laser assisted eutectic bonds

A. W.Y. Tan; F. E.H. Tay; J. Zhang

doi:10.1016/j.sna.2005.07.006

Characterization of localized laser assisted eutectic bonds

A. W.Y. Tan^*
, F. E.H. Tay
, J. Zhang

^*此作品的通讯作者

National University of Singapore
NUS
Centre of Intelligent Products and Manufacturing Systems
Agency for Science, Technology and Research, Singapore

科研成果: 期刊稿件 › 文章 › 同行评审

7 引用（Scopus）

摘要

An innovative bonding process for silicon and single crystal quartz has been developed and investigated using various material science characterization methods, such as TOF-SIMS, SEM, EDX and XRD. The bonding process combines the principles of laser transmission welding, eutectic bonding and bonding by localized heating. A focused laser beam (low power, max. 0.83 W) is transmitted through a quartz medium to intermediate layers of chromium, gold and tin at the silicon-quartz interface to provide localized heating and bonding. This bonding process is particularly suitable for bonding wafers containing temperature sensitive devices as it confines the temperature increase to a small area. Bond strength of over 15 MPa is comparable to most localized bonding schemes. This process provides a simple yet robust bonding solution with rapid processing time, selectivity of bonded area and corrosion resistant joints.

源语言	英语
页（从-至）	573-585
页数	13
期刊	Sensors and Actuators A: Physical
卷	125
期	2
DOI	https://doi.org/10.1016/j.sna.2005.07.006
出版状态	已出版 - 10 1月 2006
已对外发布	是

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title = "Characterization of localized laser assisted eutectic bonds",

abstract = "An innovative bonding process for silicon and single crystal quartz has been developed and investigated using various material science characterization methods, such as TOF-SIMS, SEM, EDX and XRD. The bonding process combines the principles of laser transmission welding, eutectic bonding and bonding by localized heating. A focused laser beam (low power, max. 0.83 W) is transmitted through a quartz medium to intermediate layers of chromium, gold and tin at the silicon-quartz interface to provide localized heating and bonding. This bonding process is particularly suitable for bonding wafers containing temperature sensitive devices as it confines the temperature increase to a small area. Bond strength of over 15 MPa is comparable to most localized bonding schemes. This process provides a simple yet robust bonding solution with rapid processing time, selectivity of bonded area and corrosion resistant joints.",

keywords = "Eutectic, Gold-tin, Interfacial characterization, Laser bonding, Low temperature, Single crystal quartz-to-silicon",

author = "Tan, \{A. W.Y.\} and Tay, \{F. E.H.\} and J. Zhang",

year = "2006",

month = jan,

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doi = "10.1016/j.sna.2005.07.006",

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TY - JOUR

T1 - Characterization of localized laser assisted eutectic bonds

AU - Tan, A. W.Y.

AU - Tay, F. E.H.

AU - Zhang, J.

PY - 2006/1/10

Y1 - 2006/1/10

N2 - An innovative bonding process for silicon and single crystal quartz has been developed and investigated using various material science characterization methods, such as TOF-SIMS, SEM, EDX and XRD. The bonding process combines the principles of laser transmission welding, eutectic bonding and bonding by localized heating. A focused laser beam (low power, max. 0.83 W) is transmitted through a quartz medium to intermediate layers of chromium, gold and tin at the silicon-quartz interface to provide localized heating and bonding. This bonding process is particularly suitable for bonding wafers containing temperature sensitive devices as it confines the temperature increase to a small area. Bond strength of over 15 MPa is comparable to most localized bonding schemes. This process provides a simple yet robust bonding solution with rapid processing time, selectivity of bonded area and corrosion resistant joints.

AB - An innovative bonding process for silicon and single crystal quartz has been developed and investigated using various material science characterization methods, such as TOF-SIMS, SEM, EDX and XRD. The bonding process combines the principles of laser transmission welding, eutectic bonding and bonding by localized heating. A focused laser beam (low power, max. 0.83 W) is transmitted through a quartz medium to intermediate layers of chromium, gold and tin at the silicon-quartz interface to provide localized heating and bonding. This bonding process is particularly suitable for bonding wafers containing temperature sensitive devices as it confines the temperature increase to a small area. Bond strength of over 15 MPa is comparable to most localized bonding schemes. This process provides a simple yet robust bonding solution with rapid processing time, selectivity of bonded area and corrosion resistant joints.

KW - Eutectic

KW - Gold-tin

KW - Interfacial characterization

KW - Laser bonding

KW - Low temperature

KW - Single crystal quartz-to-silicon

UR - https://www.scopus.com/pages/publications/29144509537

U2 - 10.1016/j.sna.2005.07.006

DO - 10.1016/j.sna.2005.07.006

M3 - 文章

AN - SCOPUS:29144509537

SN - 0924-4247

VL - 125

SP - 573

EP - 585

JO - Sensors and Actuators A: Physical

JF - Sensors and Actuators A: Physical

IS - 2

ER -

Characterization of localized laser assisted eutectic bonds

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