摘要
We demonstrate a semi-analytical parameter extraction method to characterize high-speed and high-photocurrent InP-based uni-traveling-carrier photodiodes with dipole-doped structure. The accuracy of proposed method has been validated with good agreements between the measured and simulated results of reflection coefficients and frequency responses in a wide frequency range up to 40 GHz.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 2156-2162 |
| 页数 | 7 |
| 期刊 | Microwave and Optical Technology Letters |
| 卷 | 58 |
| 期 | 9 |
| DOI | |
| 出版状态 | 已出版 - 1 9月 2016 |
指纹
探究 'Characterization of high-photocurrent and high-speed INP-based uni-traveling-carrier photodiodes at 1.55-μm wavelength' 的科研主题。它们共同构成独一无二的指纹。引用此
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