Characterization of GaN Schottky Barrier Diode for Multifinger Application

Ao Zhang; Jianjun Gao

doi:10.1109/LMWT.2025.3584366

Characterization of GaN Schottky Barrier Diode for Multifinger Application

Ao Zhang
, Jianjun Gao^*

^*此作品的通讯作者

物理与电子科学学院

科研成果: 期刊稿件 › 文章 › 同行评审

1 引用（Scopus）

摘要

A compact scalable large signal model for GaN Schottky barrier diodes (SBDs) for multifinger application is proposed in this letter. The scaling rules for intrinsic model parameters between the diodes with different numbers of fingers are presented in detail. Both the series and shunt diode structures are used to verify the scaling rules. Excellent agreement is obtained between measured and simulated dc, S-parameters, and large signal performance for GaN Schottky diodes.

源语言	英语
页（从-至）	1586-1589
页数	4
期刊	IEEE Microwave and Wireless Technology Letters
卷	35
期	10
DOI	https://doi.org/10.1109/LMWT.2025.3584366
出版状态	已出版 - 10月 2025

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title = "Characterization of GaN Schottky Barrier Diode for Multifinger Application",

abstract = "A compact scalable large signal model for GaN Schottky barrier diodes (SBDs) for multifinger application is proposed in this letter. The scaling rules for intrinsic model parameters between the diodes with different numbers of fingers are presented in detail. Both the series and shunt diode structures are used to verify the scaling rules. Excellent agreement is obtained between measured and simulated dc, S-parameters, and large signal performance for GaN Schottky diodes.",

keywords = "Equivalent circuit model, GaN, Schottky barrier diode (SBD), parameter extraction",

author = "Ao Zhang and Jianjun Gao",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.",

year = "2025",

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doi = "10.1109/LMWT.2025.3584366",

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N2 - A compact scalable large signal model for GaN Schottky barrier diodes (SBDs) for multifinger application is proposed in this letter. The scaling rules for intrinsic model parameters between the diodes with different numbers of fingers are presented in detail. Both the series and shunt diode structures are used to verify the scaling rules. Excellent agreement is obtained between measured and simulated dc, S-parameters, and large signal performance for GaN Schottky diodes.

AB - A compact scalable large signal model for GaN Schottky barrier diodes (SBDs) for multifinger application is proposed in this letter. The scaling rules for intrinsic model parameters between the diodes with different numbers of fingers are presented in detail. Both the series and shunt diode structures are used to verify the scaling rules. Excellent agreement is obtained between measured and simulated dc, S-parameters, and large signal performance for GaN Schottky diodes.

KW - Equivalent circuit model

KW - GaN

KW - Schottky barrier diode (SBD)

KW - parameter extraction

UR - https://www.scopus.com/pages/publications/105010708710

U2 - 10.1109/LMWT.2025.3584366

DO - 10.1109/LMWT.2025.3584366

M3 - 文章

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VL - 35

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EP - 1589

JO - IEEE Microwave and Wireless Technology Letters

JF - IEEE Microwave and Wireless Technology Letters

IS - 10

ER -

Characterization of GaN Schottky Barrier Diode for Multifinger Application

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