Characterization of Cu doping on GeTe for phase change memory application

Zhonghua Zhang; Cheng Peng; Sannian Song; Zhitang Song; Yan Cheng; Kun Ren; Xiaoyun Li; Feng Rao; Bo Liu; Songlin Feng

doi:10.1063/1.4851757

Characterization of Cu doping on GeTe for phase change memory application

Zhonghua Zhang
, Cheng Peng
, Sannian Song
, Zhitang Song
, Yan Cheng
, Kun Ren
, Xiaoyun Li
, Feng Rao
, Bo Liu
, Songlin Feng

CAS - Shanghai Institute of Microsystem and Information Technology
University of Chinese Academy of Sciences

科研成果: 期刊稿件 › 文章 › 同行评审

27 引用（Scopus）

摘要

In this paper, Cu-doped GeTe materials have been investigated for higherature phase change memory (PCM) application. Cu incorporated in GeTe increases the crystallization temperature, crystallization active energy, and band gap significantly. The incorporated Cu has effect on refining the crystal growth and brings more number of bonds in GeTe, and has remarkable effect on improving the thermal stability of GeTe. The 10-year data retention of Cu _0.06(GeTe)_0.94 and Cu_0.13(GeTe)_0.87 are 151 °C and 185 °C, which is higher than that of GeTe. PCM device based on Cu_0.06(GeTe)_0.94 exhibits faster switching speed than that of GeTe. In addition, Cu_0.06(GeTe)_0.94 shows endurance up to 2.8 × 10³ cycles with an on/off ratio of two orders of magnitude.

源语言	英语
期刊论文编号	244311
期刊	Journal of Applied Physics
卷	114
期	24
DOI	https://doi.org/10.1063/1.4851757
出版状态	已出版 - 28 12月 2013
已对外发布	是

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title = "Characterization of Cu doping on GeTe for phase change memory application",

abstract = "In this paper, Cu-doped GeTe materials have been investigated for higherature phase change memory (PCM) application. Cu incorporated in GeTe increases the crystallization temperature, crystallization active energy, and band gap significantly. The incorporated Cu has effect on refining the crystal growth and brings more number of bonds in GeTe, and has remarkable effect on improving the thermal stability of GeTe. The 10-year data retention of Cu 0.06(GeTe)0.94 and Cu0.13(GeTe)0.87 are 151 °C and 185 °C, which is higher than that of GeTe. PCM device based on Cu0.06(GeTe)0.94 exhibits faster switching speed than that of GeTe. In addition, Cu0.06(GeTe)0.94 shows endurance up to 2.8 {\texttimes} 103 cycles with an on/off ratio of two orders of magnitude.",

author = "Zhonghua Zhang and Cheng Peng and Sannian Song and Zhitang Song and Yan Cheng and Kun Ren and Xiaoyun Li and Feng Rao and Bo Liu and Songlin Feng",

year = "2013",

month = dec,

day = "28",

doi = "10.1063/1.4851757",

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TY - JOUR

T1 - Characterization of Cu doping on GeTe for phase change memory application

AU - Zhang, Zhonghua

AU - Peng, Cheng

AU - Song, Sannian

AU - Song, Zhitang

AU - Cheng, Yan

AU - Ren, Kun

AU - Li, Xiaoyun

AU - Rao, Feng

AU - Liu, Bo

AU - Feng, Songlin

PY - 2013/12/28

Y1 - 2013/12/28

N2 - In this paper, Cu-doped GeTe materials have been investigated for higherature phase change memory (PCM) application. Cu incorporated in GeTe increases the crystallization temperature, crystallization active energy, and band gap significantly. The incorporated Cu has effect on refining the crystal growth and brings more number of bonds in GeTe, and has remarkable effect on improving the thermal stability of GeTe. The 10-year data retention of Cu 0.06(GeTe)0.94 and Cu0.13(GeTe)0.87 are 151 °C and 185 °C, which is higher than that of GeTe. PCM device based on Cu0.06(GeTe)0.94 exhibits faster switching speed than that of GeTe. In addition, Cu0.06(GeTe)0.94 shows endurance up to 2.8 × 103 cycles with an on/off ratio of two orders of magnitude.

AB - In this paper, Cu-doped GeTe materials have been investigated for higherature phase change memory (PCM) application. Cu incorporated in GeTe increases the crystallization temperature, crystallization active energy, and band gap significantly. The incorporated Cu has effect on refining the crystal growth and brings more number of bonds in GeTe, and has remarkable effect on improving the thermal stability of GeTe. The 10-year data retention of Cu 0.06(GeTe)0.94 and Cu0.13(GeTe)0.87 are 151 °C and 185 °C, which is higher than that of GeTe. PCM device based on Cu0.06(GeTe)0.94 exhibits faster switching speed than that of GeTe. In addition, Cu0.06(GeTe)0.94 shows endurance up to 2.8 × 103 cycles with an on/off ratio of two orders of magnitude.

UR - https://www.scopus.com/pages/publications/84891683279

U2 - 10.1063/1.4851757

DO - 10.1063/1.4851757

M3 - 文章

AN - SCOPUS:84891683279

SN - 0021-8979

VL - 114

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 24

M1 - 244311

ER -

Characterization of Cu doping on GeTe for phase change memory application

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