Characterization and modeling of radiation damages via internal radiative efficiency in multi-junction solar cells

Lin Zhu; Masahiro Yoshita; Tetsuya Nakamura; Mitsuru Imaizumi; Changsu Kim; Toshimitsu Mochizuki; Shaoqiang Chen; Yoshihiko Kanemitsu; Hidefumi Akiyama

doi:10.1117/12.2212827

Characterization and modeling of radiation damages via internal radiative efficiency in multi-junction solar cells

Lin Zhu
, Masahiro Yoshita
, Tetsuya Nakamura
, Mitsuru Imaizumi
, Changsu Kim
, Toshimitsu Mochizuki
, Shaoqiang Chen
, Yoshihiko Kanemitsu
, Hidefumi Akiyama

通信与电子工程学院

The University of Tokyo
Japan Aerospace Exploration Agency
National Institute of Advanced Industrial Science and Technology
Kyoto University

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

7 引用（Scopus）

摘要

In order to understand the radiation effects in space-used multi-junction solar cells, we characterized degradations of internal radiative efficiency (η_inti) in respective subcells in InGaP/GaAs double-junction solar cells after 1-MeV electron irradiations with different electrons fluences (Φ) via absolute electroluminescence (EL) measurements, because η_inti purely represents material-quality change due to radiation damage, independently from cell structures. We analyzed the degradation of η_inti under different Φ and found that the data of η_inti versus Φ in moderate and high Φ regions are very similar and almost independent of subcell materials, while the difference in beginning-of-life qualities of InGaP and GaAs materials causes dominant difference in sub-cell sensitivity to the low radiation damages. Finally, a simple model was proposed to explain the mechanism in degradation of η_inti, and also well explained the degradation behavior in open-circuit voltage for these multi-junction solar cells.

源语言	英语
主期刊名	Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V
编辑	Masakazu Sugiyama, Alexandre Freundlich, Laurent Lombez
出版商	SPIE
ISBN（电子版）	9781628419788
DOI	https://doi.org/10.1117/12.2212827
出版状态	已出版 - 2016
活动	Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V - San Francisco, 美国期限: 15 2月 2016 → 17 2月 2016

出版系列

姓名	Proceedings of SPIE - The International Society for Optical Engineering
卷	9743
ISSN（印刷版）	0277-786X
ISSN（电子版）	1996-756X

会议

会议	Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V
国家/地区	美国
市	San Francisco
时期	15/02/16 → 17/02/16

联合国可持续发展目标

此成果有助于实现下列可持续发展目标：

可持续发展目标 7 经济适用的清洁能源

访问文件

10.1117/12.2212827

其它文件与链接

链接到 Scopus 的出版物

引用此

Zhu, L., Yoshita, M., Nakamura, T., Imaizumi, M., Kim, C., Mochizuki, T., Chen, S., Kanemitsu, Y., & Akiyama, H. (2016). Characterization and modeling of radiation damages via internal radiative efficiency in multi-junction solar cells. 在 M. Sugiyama, A. Freundlich, & L. Lombez (编辑), Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V 文章 97430U (Proceedings of SPIE - The International Society for Optical Engineering; 卷 9743). SPIE. https://doi.org/10.1117/12.2212827

Zhu, Lin ; Yoshita, Masahiro ; Nakamura, Tetsuya 等. / Characterization and modeling of radiation damages via internal radiative efficiency in multi-junction solar cells. Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V. 编辑 / Masakazu Sugiyama ; Alexandre Freundlich ; Laurent Lombez. SPIE, 2016. (Proceedings of SPIE - The International Society for Optical Engineering).

@inproceedings{1ec0618ba7544baeab7462e3f405614e,

title = "Characterization and modeling of radiation damages via internal radiative efficiency in multi-junction solar cells",

abstract = "In order to understand the radiation effects in space-used multi-junction solar cells, we characterized degradations of internal radiative efficiency (ηinti) in respective subcells in InGaP/GaAs double-junction solar cells after 1-MeV electron irradiations with different electrons fluences (Φ) via absolute electroluminescence (EL) measurements, because ηinti purely represents material-quality change due to radiation damage, independently from cell structures. We analyzed the degradation of ηinti under different Φ and found that the data of ηinti versus Φ in moderate and high Φ regions are very similar and almost independent of subcell materials, while the difference in beginning-of-life qualities of InGaP and GaAs materials causes dominant difference in sub-cell sensitivity to the low radiation damages. Finally, a simple model was proposed to explain the mechanism in degradation of ηinti, and also well explained the degradation behavior in open-circuit voltage for these multi-junction solar cells.",

keywords = "Absolute electroluminescence, III-V semiconductor materials, Photovoltaic cells, Radiation effects, Space PV",

author = "Lin Zhu and Masahiro Yoshita and Tetsuya Nakamura and Mitsuru Imaizumi and Changsu Kim and Toshimitsu Mochizuki and Shaoqiang Chen and Yoshihiko Kanemitsu and Hidefumi Akiyama",

note = "Publisher Copyright: {\textcopyright} 2016 SPIE.; Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V ; Conference date: 15-02-2016 Through 17-02-2016",

year = "2016",

doi = "10.1117/12.2212827",

language = "英语",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

editor = "Masakazu Sugiyama and Alexandre Freundlich and Laurent Lombez",

booktitle = "Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V",

address = "美国",

}

Zhu, L, Yoshita, M, Nakamura, T, Imaizumi, M, Kim, C, Mochizuki, T, Chen, S, Kanemitsu, Y & Akiyama, H 2016, Characterization and modeling of radiation damages via internal radiative efficiency in multi-junction solar cells. 在 M Sugiyama, A Freundlich & L Lombez (编辑), Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V., 97430U, Proceedings of SPIE - The International Society for Optical Engineering, 卷 9743, SPIE, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V, San Francisco, 美国, 15/02/16. https://doi.org/10.1117/12.2212827

Characterization and modeling of radiation damages via internal radiative efficiency in multi-junction solar cells. / Zhu, Lin; Yoshita, Masahiro; Nakamura, Tetsuya 等.
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V. 编辑 / Masakazu Sugiyama; Alexandre Freundlich; Laurent Lombez. SPIE, 2016. 97430U (Proceedings of SPIE - The International Society for Optical Engineering; 卷 9743).

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

TY - GEN

T1 - Characterization and modeling of radiation damages via internal radiative efficiency in multi-junction solar cells

AU - Zhu, Lin

AU - Yoshita, Masahiro

AU - Nakamura, Tetsuya

AU - Imaizumi, Mitsuru

AU - Kim, Changsu

AU - Mochizuki, Toshimitsu

AU - Chen, Shaoqiang

AU - Kanemitsu, Yoshihiko

AU - Akiyama, Hidefumi

PY - 2016

Y1 - 2016

N2 - In order to understand the radiation effects in space-used multi-junction solar cells, we characterized degradations of internal radiative efficiency (ηinti) in respective subcells in InGaP/GaAs double-junction solar cells after 1-MeV electron irradiations with different electrons fluences (Φ) via absolute electroluminescence (EL) measurements, because ηinti purely represents material-quality change due to radiation damage, independently from cell structures. We analyzed the degradation of ηinti under different Φ and found that the data of ηinti versus Φ in moderate and high Φ regions are very similar and almost independent of subcell materials, while the difference in beginning-of-life qualities of InGaP and GaAs materials causes dominant difference in sub-cell sensitivity to the low radiation damages. Finally, a simple model was proposed to explain the mechanism in degradation of ηinti, and also well explained the degradation behavior in open-circuit voltage for these multi-junction solar cells.

AB - In order to understand the radiation effects in space-used multi-junction solar cells, we characterized degradations of internal radiative efficiency (ηinti) in respective subcells in InGaP/GaAs double-junction solar cells after 1-MeV electron irradiations with different electrons fluences (Φ) via absolute electroluminescence (EL) measurements, because ηinti purely represents material-quality change due to radiation damage, independently from cell structures. We analyzed the degradation of ηinti under different Φ and found that the data of ηinti versus Φ in moderate and high Φ regions are very similar and almost independent of subcell materials, while the difference in beginning-of-life qualities of InGaP and GaAs materials causes dominant difference in sub-cell sensitivity to the low radiation damages. Finally, a simple model was proposed to explain the mechanism in degradation of ηinti, and also well explained the degradation behavior in open-circuit voltage for these multi-junction solar cells.

KW - Absolute electroluminescence

KW - III-V semiconductor materials

KW - Photovoltaic cells

KW - Radiation effects

KW - Space PV

UR - https://www.scopus.com/pages/publications/84982166241

U2 - 10.1117/12.2212827

DO - 10.1117/12.2212827

M3 - 会议稿件

AN - SCOPUS:84982166241

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V

A2 - Sugiyama, Masakazu

A2 - Freundlich, Alexandre

A2 - Lombez, Laurent

PB - SPIE

T2 - Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V

Y2 - 15 February 2016 through 17 February 2016

ER -

Zhu L, Yoshita M, Nakamura T, Imaizumi M, Kim C, Mochizuki T 等. Characterization and modeling of radiation damages via internal radiative efficiency in multi-junction solar cells. 在 Sugiyama M, Freundlich A, Lombez L, 编辑, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V. SPIE. 2016. 97430U. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.2212827

Characterization and modeling of radiation damages via internal radiative efficiency in multi-junction solar cells

摘要

出版系列

会议

联合国可持续发展目标

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