Characteristics and mechanism of phase change material W0.03Sb2Te etched by Cl2/BCl3 inductively coupled plasmas

Lanlan Shen; Sannian Song; Zhonghua Zhang; Zhitang Song; Yan Cheng; Yueqin Zhu; Xiaohui Guo; Weijun Yin; Dongning Yao; Bo Liu; Songlin Feng

doi:10.1016/j.tsf.2015.09.032

Characteristics and mechanism of phase change material W_0.03Sb₂Te etched by Cl₂/BCl₃ inductively coupled plasmas

Lanlan Shen^*
, Sannian Song
, Zhonghua Zhang
, Zhitang Song
, Yan Cheng
, Yueqin Zhu
, Xiaohui Guo
, Weijun Yin
, Dongning Yao
, Bo Liu
, Songlin Feng

^*此作品的通讯作者

CAS - Shanghai Institute of Microsystem and Information Technology
University of Chinese Academy of Sciences

科研成果: 期刊稿件 › 文章 › 同行评审

3 引用（Scopus）

摘要

Inductively coupled plasma (ICP) etching of phase change material W_0.03Sb₂Te (WST) films is studied using Cl₂/BCl₃ gas mixture. The effects of gas-mixing ratio, bias power, gas pressure, applying ICP power on the variations of etch rate, etch profiles, and surface roughness are investigated, respectively. The etch rate is found proportional to the ICP power but inversely proportional to the flow of BCl_3. The etching profile is related to gas ratio and bias power. In addition, the X-ray photoelectron spectroscopy compositional depth profiling of the blank etched WST shows accumulation of low volatility WCl_x and SbCl_x on the etched surface.

源语言	英语
页（从-至）	67-70
页数	4
期刊	Thin Solid Films
卷	593
DOI	https://doi.org/10.1016/j.tsf.2015.09.032
出版状态	已出版 - 30 10月 2015
已对外发布	是

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10.1016/j.tsf.2015.09.032

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@article{a66557d76e144eccb057728d4394a5ac,

title = "Characteristics and mechanism of phase change material W0.03Sb2Te etched by Cl2/BCl3 inductively coupled plasmas",

abstract = "Inductively coupled plasma (ICP) etching of phase change material W0.03Sb2Te (WST) films is studied using Cl2/BCl3 gas mixture. The effects of gas-mixing ratio, bias power, gas pressure, applying ICP power on the variations of etch rate, etch profiles, and surface roughness are investigated, respectively. The etch rate is found proportional to the ICP power but inversely proportional to the flow of BCl3. The etching profile is related to gas ratio and bias power. In addition, the X-ray photoelectron spectroscopy compositional depth profiling of the blank etched WST shows accumulation of low volatility WClx and SbClx on the etched surface.",

keywords = "Etching, Inductively couple plasma, Phase change materials",

author = "Lanlan Shen and Sannian Song and Zhonghua Zhang and Zhitang Song and Yan Cheng and Yueqin Zhu and Xiaohui Guo and Weijun Yin and Dongning Yao and Bo Liu and Songlin Feng",

note = "Publisher Copyright: {\textcopyright} 2015 Published by Elsevier B.V.",

year = "2015",

month = oct,

day = "30",

doi = "10.1016/j.tsf.2015.09.032",

language = "英语",

volume = "593",

pages = "67--70",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Characteristics and mechanism of phase change material W0.03Sb2Te etched by Cl2/BCl3 inductively coupled plasmas

AU - Shen, Lanlan

AU - Song, Sannian

AU - Zhang, Zhonghua

AU - Song, Zhitang

AU - Cheng, Yan

AU - Zhu, Yueqin

AU - Guo, Xiaohui

AU - Yin, Weijun

AU - Yao, Dongning

AU - Liu, Bo

AU - Feng, Songlin

PY - 2015/10/30

Y1 - 2015/10/30

N2 - Inductively coupled plasma (ICP) etching of phase change material W0.03Sb2Te (WST) films is studied using Cl2/BCl3 gas mixture. The effects of gas-mixing ratio, bias power, gas pressure, applying ICP power on the variations of etch rate, etch profiles, and surface roughness are investigated, respectively. The etch rate is found proportional to the ICP power but inversely proportional to the flow of BCl3. The etching profile is related to gas ratio and bias power. In addition, the X-ray photoelectron spectroscopy compositional depth profiling of the blank etched WST shows accumulation of low volatility WClx and SbClx on the etched surface.

AB - Inductively coupled plasma (ICP) etching of phase change material W0.03Sb2Te (WST) films is studied using Cl2/BCl3 gas mixture. The effects of gas-mixing ratio, bias power, gas pressure, applying ICP power on the variations of etch rate, etch profiles, and surface roughness are investigated, respectively. The etch rate is found proportional to the ICP power but inversely proportional to the flow of BCl3. The etching profile is related to gas ratio and bias power. In addition, the X-ray photoelectron spectroscopy compositional depth profiling of the blank etched WST shows accumulation of low volatility WClx and SbClx on the etched surface.

KW - Etching

KW - Inductively couple plasma

KW - Phase change materials

UR - https://www.scopus.com/pages/publications/84945408039

U2 - 10.1016/j.tsf.2015.09.032

DO - 10.1016/j.tsf.2015.09.032

M3 - 文章

AN - SCOPUS:84945408039

SN - 0040-6090

VL - 593

SP - 67

EP - 70

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Characteristics and mechanism of phase change material W0.03Sb2Te etched by Cl2/BCl3 inductively coupled plasmas

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Characteristics and mechanism of phase change material W_0.03Sb₂Te etched by Cl₂/BCl₃ inductively coupled plasmas