TY - GEN
T1 - Characterisation of MBE grown II-VI semiconductor thin layers by X-ray interference
AU - Prior, K. A.
AU - Tang, X.
AU - O'Donnell, C.
AU - Bradford, C.
AU - David, L.
AU - Cavenett, B. C.
N1 - Publisher Copyright:
© 2002 IEEE.
PY - 2002
Y1 - 2002
N2 - X-ray interference (XRI) is a simple and powerful technique used to characterise thin layers buried within epitaxial films of GaAs/AlGaAs and InGaAs/GaAs. XRI measurements are double crystal rocking curves made on structures of the type A/B/C/B, where A is the substrate, B a different semiconductor and C the thin layer of interest, (possibly the same as A). B/C/B forms an X-ray interference film with the thicknesses of B much greater than that of C. Here, the Pendellosung fringes from B are strongly modulated by the introduction of C. XRI is also ideal for investigating materials which can not be grown thick enough for DEKTAK measurements, in which the lattice constant is not known accurately, or the layer is unstable in air and must be capped.
AB - X-ray interference (XRI) is a simple and powerful technique used to characterise thin layers buried within epitaxial films of GaAs/AlGaAs and InGaAs/GaAs. XRI measurements are double crystal rocking curves made on structures of the type A/B/C/B, where A is the substrate, B a different semiconductor and C the thin layer of interest, (possibly the same as A). B/C/B forms an X-ray interference film with the thicknesses of B much greater than that of C. Here, the Pendellosung fringes from B are strongly modulated by the introduction of C. XRI is also ideal for investigating materials which can not be grown thick enough for DEKTAK measurements, in which the lattice constant is not known accurately, or the layer is unstable in air and must be capped.
UR - https://www.scopus.com/pages/publications/84968538178
U2 - 10.1109/MBE.2002.1037925
DO - 10.1109/MBE.2002.1037925
M3 - 会议稿件
AN - SCOPUS:84968538178
T3 - MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
SP - 393
BT - MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 12th International Conference on Molecular Beam Epitaxy, MBE 2002
Y2 - 15 September 2002 through 20 September 2002
ER -