摘要
A CdS/CdSe quantum-dot (QD)-cosensitized TiO2 film has been fabricated using a microwave-assisted chemical bath deposition technique and used as a photoanode for QD-sensitized solar cells. The technique allows a direct and rapid deposition of QDs and forms a good contact between QDs and TiO2 films. The photovoltaic performance of the as-prepared cell is investigated. The results show that the performance of the CdS/CdSe-cosensitized cell achieves a short-circuit current density of 16.1 mA cm-2 and a power conversion efficiency of 3.06% at one sun (AM 1.5 G, 100 mW cm -2), which is comparable to the one fabricated using conventional successive ionic layer adsorption and reaction technique.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 3146-3151 |
| 页数 | 6 |
| 期刊 | ACS Applied Materials and Interfaces |
| 卷 | 3 |
| 期 | 8 |
| DOI | |
| 出版状态 | 已出版 - 24 8月 2011 |
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