Carbon layer application in phase change memory to reduce power consumption and atomic migration

Kun Ren; Yan Cheng; Xin Chen; Keyuan Ding; Shilong Lv; Weijun Yin; Xiaohui Guo; Zhenguo Ji; Zhitang Song

doi:10.1016/j.matlet.2017.06.072

Carbon layer application in phase change memory to reduce power consumption and atomic migration

Kun Ren
, Yan Cheng^*
, Xin Chen
, Keyuan Ding
, Shilong Lv
, Weijun Yin
, Xiaohui Guo
, Zhenguo Ji
, Zhitang Song

^*此作品的通讯作者

Hangzhou Dianzi University
CAS - Shanghai Institute of Microsystem and Information Technology

科研成果: 期刊稿件 › 文章 › 同行评审

11 引用（Scopus）

摘要

Phase change memory (PCM) cells with carbon buffer layer have been fabricated. Carbon layer reduced the heat dissipation through upper electrode, increasing the energy efficiency of PCM, reducing the power consumption. The element distribution in PCM cell after 3 × 10⁵ cycles proved that the carbon layer has successfully prevented atoms diffusion. After carbon layer being applied, the local high temperature during RESET in phase change material has been lowered. Hence, the higher viscosity at lower temperature has reduced atomic migration, beneficial to a good endurance.

源语言	英语
页（从-至）	52-55
页数	4
期刊	Materials Letters
卷	206
DOI	https://doi.org/10.1016/j.matlet.2017.06.072
出版状态	已出版 - 1 11月 2017
已对外发布	是

联合国可持续发展目标

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可持续发展目标 7 经济适用的清洁能源

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@article{3beb8a408ca14571983cdd9bc4008c53,

title = "Carbon layer application in phase change memory to reduce power consumption and atomic migration",

abstract = "Phase change memory (PCM) cells with carbon buffer layer have been fabricated. Carbon layer reduced the heat dissipation through upper electrode, increasing the energy efficiency of PCM, reducing the power consumption. The element distribution in PCM cell after 3 {\texttimes} 105 cycles proved that the carbon layer has successfully prevented atoms diffusion. After carbon layer being applied, the local high temperature during RESET in phase change material has been lowered. Hence, the higher viscosity at lower temperature has reduced atomic migration, beneficial to a good endurance.",

keywords = "Carbon materials, Phase change memory, Physical vapor deposition, Thermal analysis",

author = "Kun Ren and Yan Cheng and Xin Chen and Keyuan Ding and Shilong Lv and Weijun Yin and Xiaohui Guo and Zhenguo Ji and Zhitang Song",

note = "Publisher Copyright: {\textcopyright} 2017",

year = "2017",

month = nov,

day = "1",

doi = "10.1016/j.matlet.2017.06.072",

language = "英语",

volume = "206",

pages = "52--55",

journal = "Materials Letters",

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TY - JOUR

T1 - Carbon layer application in phase change memory to reduce power consumption and atomic migration

AU - Ren, Kun

AU - Cheng, Yan

AU - Chen, Xin

AU - Ding, Keyuan

AU - Lv, Shilong

AU - Yin, Weijun

AU - Guo, Xiaohui

AU - Ji, Zhenguo

AU - Song, Zhitang

PY - 2017/11/1

Y1 - 2017/11/1

N2 - Phase change memory (PCM) cells with carbon buffer layer have been fabricated. Carbon layer reduced the heat dissipation through upper electrode, increasing the energy efficiency of PCM, reducing the power consumption. The element distribution in PCM cell after 3 × 105 cycles proved that the carbon layer has successfully prevented atoms diffusion. After carbon layer being applied, the local high temperature during RESET in phase change material has been lowered. Hence, the higher viscosity at lower temperature has reduced atomic migration, beneficial to a good endurance.

AB - Phase change memory (PCM) cells with carbon buffer layer have been fabricated. Carbon layer reduced the heat dissipation through upper electrode, increasing the energy efficiency of PCM, reducing the power consumption. The element distribution in PCM cell after 3 × 105 cycles proved that the carbon layer has successfully prevented atoms diffusion. After carbon layer being applied, the local high temperature during RESET in phase change material has been lowered. Hence, the higher viscosity at lower temperature has reduced atomic migration, beneficial to a good endurance.

KW - Carbon materials

KW - Phase change memory

KW - Physical vapor deposition

KW - Thermal analysis

UR - https://www.scopus.com/pages/publications/85021400430

U2 - 10.1016/j.matlet.2017.06.072

DO - 10.1016/j.matlet.2017.06.072

M3 - 文章

AN - SCOPUS:85021400430

SN - 0167-577X

VL - 206

SP - 52

EP - 55

JO - Materials Letters

JF - Materials Letters

ER -

Carbon layer application in phase change memory to reduce power consumption and atomic migration

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