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Bulk photovoltaic effect at infrared wavelength in strained Bi2Te3 films

  • Yucong Liu
  • , Jiadong Chen
  • , Chao Wang
  • , Huiyong Deng*
  • , Da Ming Zhu
  • , Gujin Hu
  • , Xiaoshuang Chen
  • , Ning Dai
  • *此作品的通讯作者
  • CAS - Shanghai Institute of Technical Physics
  • University of Chinese Academy of Sciences
  • Changzhou Institute of Optoelectronic Technology
  • University of Missouri at Kansas City
  • Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering

科研成果: 期刊稿件文章同行评审

摘要

As a prominent three-dimensional (3-D) topological insulator, traditional thermoelectric material Bi2Te3 has re-attracted greater interest in recent years. Herein, we demonstrate for the first time that c-axis oriented strained Bi2Te3 films exhibit the bulk photovoltaic effect (BPVE) at infrared wavelengths, which was only found in wide band-gap ferroelectric materials before. Moreover, further experiments show that the bulk photovoltaic effect probably comes from the flexoelectric effect which was induced by the stress gradient in strained Bi2Te3 films. And we anticipate that the results are generalizable to other layer-structured or two-dimensional (2-D) materials, e.g., Bi2Se3 and MoS2.

源语言英语
文章编号126104
期刊APL Materials
4
12
DOI
出版状态已出版 - 1 12月 2016
已对外发布

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    可持续发展目标 7 经济适用的清洁能源

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