Broadband near-infrared emission of chromium-doped sulfide glass-ceramics containing Ga2S3 nanocrystals

Jing Ren; Bo Li; Guang Yang; Weina Xu; Zhihuan Zhang; Mihail Secu; Vasile Bercu; Huidan Zeng; Guorong Chen

doi:10.1364/OL.37.005043

Broadband near-infrared emission of chromium-doped sulfide glass-ceramics containing Ga₂S₃ nanocrystals

Jing Ren^*
, Bo Li
, Guang Yang
, Weina Xu
, Zhihuan Zhang
, Mihail Secu
, Vasile Bercu
, Huidan Zeng
, Guorong Chen

^*此作品的通讯作者

物理与电子科学学院

East China University of Science and Technology
Université de Rennes
Institut de Physique des Materiaux, Bucarest-Magurele
University of Bucharest

科研成果: 期刊稿件 › 文章 › 同行评审

23 引用（Scopus）

摘要

Upon 808 nm excitation, an intense broadband near-infrared emission from Cr⁴⁺ has been observed in 80GeS₂-20Ga₂S ₃ chalcogenide glass-ceramics (GCs) containing Ga₂S ₃ nanocrystals. The emission band peaking at 1250 nm covers the O, E, S bands (1000-1500 nm). The formation of Ga₂S₃ nanocrystals (∼20 nm) increases the emission intensity of Cr⁴⁺ by more than three times. The quantum efficiency of the present GCs is as great as 36% at room temperature.

源语言	英语
页（从-至）	5043-5045
页数	3
期刊	Optics Letters
卷	37
期	24
DOI	https://doi.org/10.1364/OL.37.005043
出版状态	已出版 - 15 12月 2012

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@article{644421ff60fb4bcfa0eeade8d54f7853,

title = "Broadband near-infrared emission of chromium-doped sulfide glass-ceramics containing Ga2S3 nanocrystals",

abstract = "Upon 808 nm excitation, an intense broadband near-infrared emission from Cr4+ has been observed in 80GeS2-20Ga2S 3 chalcogenide glass-ceramics (GCs) containing Ga2S 3 nanocrystals. The emission band peaking at 1250 nm covers the O, E, S bands (1000-1500 nm). The formation of Ga2S3 nanocrystals (∼20 nm) increases the emission intensity of Cr4+ by more than three times. The quantum efficiency of the present GCs is as great as 36\% at room temperature.",

author = "Jing Ren and Bo Li and Guang Yang and Weina Xu and Zhihuan Zhang and Mihail Secu and Vasile Bercu and Huidan Zeng and Guorong Chen",

year = "2012",

month = dec,

day = "15",

doi = "10.1364/OL.37.005043",

language = "英语",

volume = "37",

pages = "5043--5045",

journal = "Optics Letters",

issn = "0146-9592",

publisher = "Optica Publishing Group (formerly OSA)",

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TY - JOUR

T1 - Broadband near-infrared emission of chromium-doped sulfide glass-ceramics containing Ga2S3 nanocrystals

AU - Ren, Jing

AU - Li, Bo

AU - Yang, Guang

AU - Xu, Weina

AU - Zhang, Zhihuan

AU - Secu, Mihail

AU - Bercu, Vasile

AU - Zeng, Huidan

AU - Chen, Guorong

PY - 2012/12/15

Y1 - 2012/12/15

N2 - Upon 808 nm excitation, an intense broadband near-infrared emission from Cr4+ has been observed in 80GeS2-20Ga2S 3 chalcogenide glass-ceramics (GCs) containing Ga2S 3 nanocrystals. The emission band peaking at 1250 nm covers the O, E, S bands (1000-1500 nm). The formation of Ga2S3 nanocrystals (∼20 nm) increases the emission intensity of Cr4+ by more than three times. The quantum efficiency of the present GCs is as great as 36% at room temperature.

AB - Upon 808 nm excitation, an intense broadband near-infrared emission from Cr4+ has been observed in 80GeS2-20Ga2S 3 chalcogenide glass-ceramics (GCs) containing Ga2S 3 nanocrystals. The emission band peaking at 1250 nm covers the O, E, S bands (1000-1500 nm). The formation of Ga2S3 nanocrystals (∼20 nm) increases the emission intensity of Cr4+ by more than three times. The quantum efficiency of the present GCs is as great as 36% at room temperature.

UR - https://www.scopus.com/pages/publications/84871309549

U2 - 10.1364/OL.37.005043

DO - 10.1364/OL.37.005043

M3 - 文章

AN - SCOPUS:84871309549

SN - 0146-9592

VL - 37

SP - 5043

EP - 5045

JO - Optics Letters

JF - Optics Letters

IS - 24

ER -

Broadband near-infrared emission of chromium-doped sulfide glass-ceramics containing Ga2S3 nanocrystals

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Broadband near-infrared emission of chromium-doped sulfide glass-ceramics containing Ga₂S₃ nanocrystals