摘要
Near-infrared (NIR) single-photon source plays a key role in a wide range of applications in quantum technology. In particular, in quantum communication, the NIR wavelength operation perfectly matches the relatively low-attenuation transmission window of the optical fiber, which attracts more and more research interest. Here, we report the room temperature single-photon emission from single point defects in the aluminum gallium nitride (AlGaN) film. The obtained single-photon emission covers from 720 to 930 nm and exhibits highly linear polarization and high photon brightness. This may provide a platform for future integrated on-chip quantum photonic devices.
| 源语言 | 英语 |
|---|---|
| 文章编号 | 131103 |
| 期刊 | Applied Physics Letters |
| 卷 | 118 |
| 期 | 13 |
| DOI | |
| 出版状态 | 已出版 - 29 3月 2021 |
指纹
探究 'Bright room temperature near-infrared single-photon emission from single point defects in the AlGaN film' 的科研主题。它们共同构成独一无二的指纹。引用此
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