Bonding to antibonding transition for hole ground states in coupled InAs quantum wires

Jiqing Wang; Deshuang Shang; Huibing Mao; Jianguo Yu; Qiang Zhao; Pingxiong Yang; Huaizhong Xing

doi:10.1016/j.ssc.2012.11.023

Bonding to antibonding transition for hole ground states in coupled InAs quantum wires

Jiqing Wang^*
, Deshuang Shang
, Huibing Mao
, Jianguo Yu
, Qiang Zhao
, Pingxiong Yang
, Huaizhong Xing

^*此作品的通讯作者

East China Normal University
Donghua University

科研成果: 期刊稿件 › 文章 › 同行评审

1 引用（Scopus）

摘要

We calculate hole energies of the bonding and antibonding states in coupled quantum wires using 6-band kp model. It is shown that hole ground state changes character from a bonding to an antibonding orbital with increasing inter-wire distances. This effect is a consequence of the enhancement of light hole contribution to the ground state. The variations of g factors under external electric and magnetic fields demonstrate the antibonding character of hole ground states.

源语言	英语
页（从-至）	41-44
页数	4
期刊	Solid State Communications
卷	156
DOI	https://doi.org/10.1016/j.ssc.2012.11.023
出版状态	已出版 - 3月 2013
已对外发布	是

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title = "Bonding to antibonding transition for hole ground states in coupled InAs quantum wires",

abstract = "We calculate hole energies of the bonding and antibonding states in coupled quantum wires using 6-band kp model. It is shown that hole ground state changes character from a bonding to an antibonding orbital with increasing inter-wire distances. This effect is a consequence of the enhancement of light hole contribution to the ground state. The variations of g factors under external electric and magnetic fields demonstrate the antibonding character of hole ground states.",

keywords = "A. InAs, A. Quantum wire, D. Hole, D. g Factor",

author = "Jiqing Wang and Deshuang Shang and Huibing Mao and Jianguo Yu and Qiang Zhao and Pingxiong Yang and Huaizhong Xing",

year = "2013",

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doi = "10.1016/j.ssc.2012.11.023",

language = "英语",

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journal = "Solid State Communications",

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T1 - Bonding to antibonding transition for hole ground states in coupled InAs quantum wires

AU - Wang, Jiqing

AU - Shang, Deshuang

AU - Mao, Huibing

AU - Yu, Jianguo

AU - Zhao, Qiang

AU - Yang, Pingxiong

AU - Xing, Huaizhong

PY - 2013/3

Y1 - 2013/3

N2 - We calculate hole energies of the bonding and antibonding states in coupled quantum wires using 6-band kp model. It is shown that hole ground state changes character from a bonding to an antibonding orbital with increasing inter-wire distances. This effect is a consequence of the enhancement of light hole contribution to the ground state. The variations of g factors under external electric and magnetic fields demonstrate the antibonding character of hole ground states.

AB - We calculate hole energies of the bonding and antibonding states in coupled quantum wires using 6-band kp model. It is shown that hole ground state changes character from a bonding to an antibonding orbital with increasing inter-wire distances. This effect is a consequence of the enhancement of light hole contribution to the ground state. The variations of g factors under external electric and magnetic fields demonstrate the antibonding character of hole ground states.

KW - A. InAs

KW - A. Quantum wire

KW - D. Hole

KW - D. g Factor

UR - https://www.scopus.com/pages/publications/84873580316

U2 - 10.1016/j.ssc.2012.11.023

DO - 10.1016/j.ssc.2012.11.023

M3 - 文章

AN - SCOPUS:84873580316

SN - 0038-1098

VL - 156

SP - 41

EP - 44

JO - Solid State Communications

JF - Solid State Communications

ER -

Bonding to antibonding transition for hole ground states in coupled InAs quantum wires

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