摘要
In this article, bias-dependent small-signal modeling approach based on neuro-space mapping is proposed for MOSFET. Good agreement is obtained between the simulated and measured results for a 130 nm MOSFET in the frequency range of 100 MHz-40 GHz confirming the validity and effectiveness of our approach. In addition, higher accuracy is achieved by our approach in contrast to conventional empirical model.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 182-189 |
| 页数 | 8 |
| 期刊 | International Journal of RF and Microwave Computer-Aided Engineering |
| 卷 | 21 |
| 期 | 2 |
| DOI | |
| 出版状态 | 已出版 - 3月 2011 |
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