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Berry-Phase Switch in Electrostatically Confined Topological Surface States

  • Tsinghua University
  • Frontier Science Center for Quantum Information
  • Southern University of Science and Technology

科研成果: 期刊稿件文章同行评审

摘要

Here, we visualize the trapping of topological surface states in the circular n-p junctions on the top surface of the seven-quintuple-layer three dimensional (3D) topological insulator (TI) Sb2Te3 epitaxial films. As shown by spatially dependent and field-dependent tunneling spectra, these trapped resonances show field-induced splittings between the degenerate time-reversal-symmetric states at zero magnetic field. These behaviors are attributed unambiguously to Berry-phase switch by comparing the experimental data with both numerical and semiclassical simulations. The successful electrostatic trapping of topological surface states in epitaxial films and the observation of Berry-phase switch provide a rich platform of exploiting new ideas for TI-based quantum devices.

源语言英语
文章编号126402
期刊Physical Review Letters
128
12
DOI
出版状态已出版 - 25 3月 2022

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