Beating patterns in the Shubnikov-de Haas oscillations originated from spin splitting in In0.52Al0.48As/In0.65Ga0.35As heterostructures: Experiment and calculation

L. J. Cui; Y. P. Zeng; Y. Zhang; W. Z. Zhou; L. Y. Shang; T. Lin; J. H. Chu

doi:10.1016/j.physe.2016.04.028

Beating patterns in the Shubnikov-de Haas oscillations originated from spin splitting in In_0.52Al_0.48As/In_0.65Ga_0.35As heterostructures: Experiment and calculation

L. J. Cui^*
, Y. P. Zeng
, Y. Zhang
, W. Z. Zhou
, L. Y. Shang
, T. Lin
, J. H. Chu

^*此作品的通讯作者

科研成果: 期刊稿件 › 文章 › 同行评审

6 引用（Scopus）

摘要

Shubnikov-de Haas (SdH) oscillation measurements at 1.5 K were carried out for In_0.52Al_0.48As/In_0.65Ga_0.35As heterostructures with different Si delta-doping concentration and spacer thickness. The dominant zero-magnetic field spin splitting mechanism is attributed to the contribution by the Rashba term due to the structure inversion asymmetry (SIA) in the In_0.65Ga_0.35As quantum well. The origin of the beating pattern in the SdH oscillations is investigated through the calculation of the transverse magnetoresistance versus magnetic field B by considering the Zeeman splitting and zero-magnetic field spin splitting in Si delta-doped In_0.65Ga_0.35As quantum wells. The good agreement between the theoretical and experimental curves suggest that the origin of beating patterns of the SdH oscillations is due to interplay of Rashba spin splitting, Zeeman splitting and Landau splitting.

源语言	英语
页（从-至）	114-118
页数	5
期刊	Physica E: Low-Dimensional Systems and Nanostructures
卷	83
DOI	https://doi.org/10.1016/j.physe.2016.04.028
出版状态	已出版 - 1 9月 2016
已对外发布	是

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@article{622e7a24357a465d857f055d13fd9946,

title = "Beating patterns in the Shubnikov-de Haas oscillations originated from spin splitting in In0.52Al0.48As/In0.65Ga0.35As heterostructures: Experiment and calculation",

abstract = "Shubnikov-de Haas (SdH) oscillation measurements at 1.5 K were carried out for In0.52Al0.48As/In0.65Ga0.35As heterostructures with different Si delta-doping concentration and spacer thickness. The dominant zero-magnetic field spin splitting mechanism is attributed to the contribution by the Rashba term due to the structure inversion asymmetry (SIA) in the In0.65Ga0.35As quantum well. The origin of the beating pattern in the SdH oscillations is investigated through the calculation of the transverse magnetoresistance versus magnetic field B by considering the Zeeman splitting and zero-magnetic field spin splitting in Si delta-doped In0.65Ga0.35As quantum wells. The good agreement between the theoretical and experimental curves suggest that the origin of beating patterns of the SdH oscillations is due to interplay of Rashba spin splitting, Zeeman splitting and Landau splitting.",

keywords = "Quantum well, Semiconductor heterostructures, Spin-orbit coupling (SOC), Two-dimensional electron gas (2DEG)",

author = "Cui, \{L. J.\} and Zeng, \{Y. P.\} and Y. Zhang and Zhou, \{W. Z.\} and Shang, \{L. Y.\} and T. Lin and Chu, \{J. H.\}",

note = "Publisher Copyright: {\textcopyright} 2016 Published by Elsevier B.V.",

year = "2016",

month = sep,

day = "1",

doi = "10.1016/j.physe.2016.04.028",

language = "英语",

volume = "83",

pages = "114--118",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Beating patterns in the Shubnikov-de Haas oscillations originated from spin splitting in In0.52Al0.48As/In0.65Ga0.35As heterostructures

T2 - Experiment and calculation

AU - Cui, L. J.

AU - Zeng, Y. P.

AU - Zhang, Y.

AU - Zhou, W. Z.

AU - Shang, L. Y.

AU - Lin, T.

AU - Chu, J. H.

PY - 2016/9/1

Y1 - 2016/9/1

N2 - Shubnikov-de Haas (SdH) oscillation measurements at 1.5 K were carried out for In0.52Al0.48As/In0.65Ga0.35As heterostructures with different Si delta-doping concentration and spacer thickness. The dominant zero-magnetic field spin splitting mechanism is attributed to the contribution by the Rashba term due to the structure inversion asymmetry (SIA) in the In0.65Ga0.35As quantum well. The origin of the beating pattern in the SdH oscillations is investigated through the calculation of the transverse magnetoresistance versus magnetic field B by considering the Zeeman splitting and zero-magnetic field spin splitting in Si delta-doped In0.65Ga0.35As quantum wells. The good agreement between the theoretical and experimental curves suggest that the origin of beating patterns of the SdH oscillations is due to interplay of Rashba spin splitting, Zeeman splitting and Landau splitting.

AB - Shubnikov-de Haas (SdH) oscillation measurements at 1.5 K were carried out for In0.52Al0.48As/In0.65Ga0.35As heterostructures with different Si delta-doping concentration and spacer thickness. The dominant zero-magnetic field spin splitting mechanism is attributed to the contribution by the Rashba term due to the structure inversion asymmetry (SIA) in the In0.65Ga0.35As quantum well. The origin of the beating pattern in the SdH oscillations is investigated through the calculation of the transverse magnetoresistance versus magnetic field B by considering the Zeeman splitting and zero-magnetic field spin splitting in Si delta-doped In0.65Ga0.35As quantum wells. The good agreement between the theoretical and experimental curves suggest that the origin of beating patterns of the SdH oscillations is due to interplay of Rashba spin splitting, Zeeman splitting and Landau splitting.

KW - Quantum well

KW - Semiconductor heterostructures

KW - Spin-orbit coupling (SOC)

KW - Two-dimensional electron gas (2DEG)

UR - https://www.scopus.com/pages/publications/84964699542

U2 - 10.1016/j.physe.2016.04.028

DO - 10.1016/j.physe.2016.04.028

M3 - 文章

AN - SCOPUS:84964699542

SN - 1386-9477

VL - 83

SP - 114

EP - 118

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

ER -

Beating patterns in the Shubnikov-de Haas oscillations originated from spin splitting in In0.52Al0.48As/In0.65Ga0.35As heterostructures: Experiment and calculation

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Beating patterns in the Shubnikov-de Haas oscillations originated from spin splitting in In_0.52Al_0.48As/In_0.65Ga_0.35As heterostructures: Experiment and calculation