Beating patterns in the oscillatory magnetoresistance of a Si modulation-doped AlGaN/GaN heterostructure

Wei Yao; Zhi Jun Qiu; Yong Sheng Gui; Ze Wei Zheng; Jie Lu; Ning Tang; Bo Shen; Jun Hao Chu

doi:10.7498/aps.54.2247

Beating patterns in the oscillatory magnetoresistance of a Si modulation-doped AlGaN/GaN heterostructure

Wei Yao
, Zhi Jun Qiu
, Yong Sheng Gui
, Ze Wei Zheng
, Jie Lu
, Ning Tang
, Bo Shen
, Jun Hao Chu^*

^*此作品的通讯作者

CAS - Shanghai Institute of Technical Physics
Nanjing University

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

Magneto-transport measurements have been carried out on a Si modulation-doped Al_0.22Ga_0.78N/GaN heterostructure in a temperature range between 1.5 and 25 K under magnetic field up to 10 T. Striking beating patterns in magnetoresistance vs magnetic field are observed in the vicinity of a specific temperature. Theoretical simulation is performed and the comparison between numerical simulations and the experimental data reveals that the beating patterns are due to the interference of the magneto-intersubband scattering and the SdH oscillator of first subband.

源语言	英语
页（从-至）	2247-2251
页数	5
期刊	Wuli Xuebao/Acta Physica Sinica
卷	54
期	5
DOI	https://doi.org/10.7498/aps.54.2247
出版状态	已出版 - 5月 2005
已对外发布	是

访问文件

10.7498/aps.54.2247

其它文件与链接

链接到 Scopus 的出版物

引用此

@article{afc8407ebe2a4fe1bf04d6e593d9beee,

title = "Beating patterns in the oscillatory magnetoresistance of a Si modulation-doped AlGaN/GaN heterostructure",

abstract = "Magneto-transport measurements have been carried out on a Si modulation-doped Al0.22Ga0.78N/GaN heterostructure in a temperature range between 1.5 and 25 K under magnetic field up to 10 T. Striking beating patterns in magnetoresistance vs magnetic field are observed in the vicinity of a specific temperature. Theoretical simulation is performed and the comparison between numerical simulations and the experimental data reveals that the beating patterns are due to the interference of the magneto-intersubband scattering and the SdH oscillator of first subband.",

keywords = "AlGaN/GaN heterostructure, Beating patterns, Magneto-intersubband scattering, SdH oscillator",

author = "Wei Yao and Qiu, \{Zhi Jun\} and Gui, \{Yong Sheng\} and Zheng, \{Ze Wei\} and Jie Lu and Ning Tang and Bo Shen and Chu, \{Jun Hao\}",

year = "2005",

month = may,

doi = "10.7498/aps.54.2247",

language = "英语",

volume = "54",

pages = "2247--2251",

journal = "Wuli Xuebao/Acta Physica Sinica",

issn = "1000-3290",

publisher = "Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences",

number = "5",

}

TY - JOUR

T1 - Beating patterns in the oscillatory magnetoresistance of a Si modulation-doped AlGaN/GaN heterostructure

AU - Yao, Wei

AU - Qiu, Zhi Jun

AU - Gui, Yong Sheng

AU - Zheng, Ze Wei

AU - Lu, Jie

AU - Tang, Ning

AU - Shen, Bo

AU - Chu, Jun Hao

PY - 2005/5

Y1 - 2005/5

N2 - Magneto-transport measurements have been carried out on a Si modulation-doped Al0.22Ga0.78N/GaN heterostructure in a temperature range between 1.5 and 25 K under magnetic field up to 10 T. Striking beating patterns in magnetoresistance vs magnetic field are observed in the vicinity of a specific temperature. Theoretical simulation is performed and the comparison between numerical simulations and the experimental data reveals that the beating patterns are due to the interference of the magneto-intersubband scattering and the SdH oscillator of first subband.

AB - Magneto-transport measurements have been carried out on a Si modulation-doped Al0.22Ga0.78N/GaN heterostructure in a temperature range between 1.5 and 25 K under magnetic field up to 10 T. Striking beating patterns in magnetoresistance vs magnetic field are observed in the vicinity of a specific temperature. Theoretical simulation is performed and the comparison between numerical simulations and the experimental data reveals that the beating patterns are due to the interference of the magneto-intersubband scattering and the SdH oscillator of first subband.

KW - AlGaN/GaN heterostructure

KW - Beating patterns

KW - Magneto-intersubband scattering

KW - SdH oscillator

UR - https://www.scopus.com/pages/publications/19044400313

U2 - 10.7498/aps.54.2247

DO - 10.7498/aps.54.2247

M3 - 文章

AN - SCOPUS:19044400313

SN - 1000-3290

VL - 54

SP - 2247

EP - 2251

JO - Wuli Xuebao/Acta Physica Sinica

JF - Wuli Xuebao/Acta Physica Sinica

IS - 5

ER -

Beating patterns in the oscillatory magnetoresistance of a Si modulation-doped AlGaN/GaN heterostructure

摘要

访问文件

其它文件与链接

指纹

引用此