Band-gap expansion, core-level shift, and dielectric suppression of porous silicon passivated by plasma fluorination

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31 引用（Scopus）

源语言	英语
页（从-至）	583-587
页数	5
期刊	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
卷	22
期	2
DOI	https://doi.org/10.1116/1.1651108
出版状态	已出版 - 2004
已对外发布	是

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title = "Band-gap expansion, core-level shift, and dielectric suppression of porous silicon passivated by plasma fluorination",

author = "Pan, \{L. K.\} and Ee, \{Y. K.\} and Sun, \{C. Q.\} and Yu, \{G. Q.\} and Zhang, \{Q. Y.\} and Tay, \{B. K.\}",

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T1 - Band-gap expansion, core-level shift, and dielectric suppression of porous silicon passivated by plasma fluorination

AU - Pan, L. K.

AU - Ee, Y. K.

AU - Sun, C. Q.

AU - Yu, G. Q.

AU - Zhang, Q. Y.

AU - Tay, B. K.

PY - 2004

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DO - 10.1116/1.1651108

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SN - 1071-1023

VL - 22

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EP - 587

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

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ER -