Axial growth of Zn2GeO4/ZnO nanowire heterojunction using chemical vapor deposition

Baobao Cao; Jiajun Chen; Rong Huang; Yumi H. Ikuhara; Tsukasa Hirayama; Weilie Zhou

doi:10.1016/j.jcrysgro.2010.12.060

Axial growth of Zn₂GeO₄/ZnO nanowire heterojunction using chemical vapor deposition

Baobao Cao
, Jiajun Chen
, Rong Huang
, Yumi H. Ikuhara
, Tsukasa Hirayama
, Weilie Zhou^*

^*此作品的通讯作者

University of New Orleans
Japan Fine Ceramics Center

科研成果: 期刊稿件 › 文章 › 同行评审

15 引用（Scopus）

摘要

The axial Zn₂GeO₄/ZnO nanowire heterojunction was successfully synthesized via chemical vapor deposition (CVD) approach. The transmission electron microscopy (TEM) study revealed that the growth follows the vaporliquidsolid (VLS) mechanism with an orientation relationship of (3 0 0)_Zn2GeO4//(-1 1 0)_ZnO and (0 0 3)_Zn2GeO4//(1 1 0)_ZnO, in which a small lattice mismatch between Zn ₂GeO₄ and ZnO was observed. The ZnO segment grows out axially along Zn₂GeO₄ ternary nanowire and its length can be tuned from tens of nanometers to over 10 μm by adjusting the ZnO source supply. This ternary/binary nanowire heterojunction shows a diode effect via nano-manipulators in-situ measurement under field emission scanning electron microsocpy (FESEM).

源语言	英语
页（从-至）	46-50
页数	5
期刊	Journal of Crystal Growth
卷	316
期	1
DOI	https://doi.org/10.1016/j.jcrysgro.2010.12.060
出版状态	已出版 - 1 2月 2011
已对外发布	是

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10.1016/j.jcrysgro.2010.12.060

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@article{7565b446c29e49d09c75350ee90485a7,

title = "Axial growth of Zn2GeO4/ZnO nanowire heterojunction using chemical vapor deposition",

abstract = "The axial Zn2GeO4/ZnO nanowire heterojunction was successfully synthesized via chemical vapor deposition (CVD) approach. The transmission electron microscopy (TEM) study revealed that the growth follows the vaporliquidsolid (VLS) mechanism with an orientation relationship of (3 0 0)Zn2GeO4//(-1 1 0)ZnO and (0 0 3)Zn2GeO4//(1 1 0)ZnO, in which a small lattice mismatch between Zn 2GeO4 and ZnO was observed. The ZnO segment grows out axially along Zn2GeO4 ternary nanowire and its length can be tuned from tens of nanometers to over 10 μm by adjusting the ZnO source supply. This ternary/binary nanowire heterojunction shows a diode effect via nano-manipulators in-situ measurement under field emission scanning electron microsocpy (FESEM).",

keywords = "A1. Nanostructures, A3. Chemical vapor deposition processes, B1. Oxides, B2. Semiconducting materials, B3. Heterojunction semiconductor devices",

author = "Baobao Cao and Jiajun Chen and Rong Huang and Ikuhara, \{Yumi H.\} and Tsukasa Hirayama and Weilie Zhou",

year = "2011",

month = feb,

day = "1",

doi = "10.1016/j.jcrysgro.2010.12.060",

language = "英语",

volume = "316",

pages = "46--50",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1",

}

TY - JOUR

T1 - Axial growth of Zn2GeO4/ZnO nanowire heterojunction using chemical vapor deposition

AU - Cao, Baobao

AU - Chen, Jiajun

AU - Huang, Rong

AU - Ikuhara, Yumi H.

AU - Hirayama, Tsukasa

AU - Zhou, Weilie

PY - 2011/2/1

Y1 - 2011/2/1

N2 - The axial Zn2GeO4/ZnO nanowire heterojunction was successfully synthesized via chemical vapor deposition (CVD) approach. The transmission electron microscopy (TEM) study revealed that the growth follows the vaporliquidsolid (VLS) mechanism with an orientation relationship of (3 0 0)Zn2GeO4//(-1 1 0)ZnO and (0 0 3)Zn2GeO4//(1 1 0)ZnO, in which a small lattice mismatch between Zn 2GeO4 and ZnO was observed. The ZnO segment grows out axially along Zn2GeO4 ternary nanowire and its length can be tuned from tens of nanometers to over 10 μm by adjusting the ZnO source supply. This ternary/binary nanowire heterojunction shows a diode effect via nano-manipulators in-situ measurement under field emission scanning electron microsocpy (FESEM).

AB - The axial Zn2GeO4/ZnO nanowire heterojunction was successfully synthesized via chemical vapor deposition (CVD) approach. The transmission electron microscopy (TEM) study revealed that the growth follows the vaporliquidsolid (VLS) mechanism with an orientation relationship of (3 0 0)Zn2GeO4//(-1 1 0)ZnO and (0 0 3)Zn2GeO4//(1 1 0)ZnO, in which a small lattice mismatch between Zn 2GeO4 and ZnO was observed. The ZnO segment grows out axially along Zn2GeO4 ternary nanowire and its length can be tuned from tens of nanometers to over 10 μm by adjusting the ZnO source supply. This ternary/binary nanowire heterojunction shows a diode effect via nano-manipulators in-situ measurement under field emission scanning electron microsocpy (FESEM).

KW - A1. Nanostructures

KW - A3. Chemical vapor deposition processes

KW - B1. Oxides

KW - B2. Semiconducting materials

KW - B3. Heterojunction semiconductor devices

UR - https://www.scopus.com/pages/publications/79551684078

U2 - 10.1016/j.jcrysgro.2010.12.060

DO - 10.1016/j.jcrysgro.2010.12.060

M3 - 文章

AN - SCOPUS:79551684078

SN - 0022-0248

VL - 316

SP - 46

EP - 50

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -

Axial growth of Zn2GeO4/ZnO nanowire heterojunction using chemical vapor deposition

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Axial growth of Zn₂GeO₄/ZnO nanowire heterojunction using chemical vapor deposition