Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation

Syuto Tamura; Godai Koike; Akira Komatsubara; Tokuyuki Teraji; Shinobu Onoda; Liam P. McGuinness; Lachlan Rogers; Boris Naydenov; E. Wu; Liu Yan; Fedor Jelezko; Takeshi Ohshima; Junichi Isoya; Takahiro Shinada; Takashi Tanii

doi:10.7567/APEX.7.115201

Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation

Syuto Tamura
, Godai Koike
, Akira Komatsubara
, Tokuyuki Teraji
, Shinobu Onoda
, Liam P. McGuinness
, Lachlan Rogers
, Boris Naydenov
, E. Wu
, Liu Yan
, Fedor Jelezko
, Takeshi Ohshima
, Junichi Isoya
, Takahiro Shinada
, Takashi Tanii

精密光谱科学与技术高等研究院

Waseda University
National Institute for Materials Science Tsukuba
Japan Atomic Energy Agency
Ulm University
East China Normal University
University of Tsukuba
National Institute of Advanced Industrial Science and Technology

科研成果: 期刊稿件 › 文章 › 同行评审

81 引用（Scopus）

摘要

Among promising color centers for single-photon sources in diamond, the negatively charged silicon-vacancy (SiV%) has 70% of its emission to the zero-phonon line (ZPL), in contrast to the negatively charged nitrogen vacancy (NV^-), which has a broad spectrum. Fabricating single centers of useful defect complexes with high yield and excellent grown-in defect properties by ion implantation has proven to be challenging. We have fabricated bright single SiV^- centers by 60-keV focused ion beam implantation and subsequent annealing at 1000 °C with high positioning accuracy and a high yield of 15%.

源语言	英语
页（从-至）	115201
页数	1
期刊	Applied Physics Express
卷	7
期	11
DOI	https://doi.org/10.7567/APEX.7.115201
出版状态	已出版 - 1 11月 2014

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Tamura, S., Koike, G., Komatsubara, A., Teraji, T., Onoda, S., McGuinness, L. P., Rogers, L., Naydenov, B., Wu, E., Yan, L., Jelezko, F., Ohshima, T., Isoya, J., Shinada, T., & Tanii, T. (2014). Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation. Applied Physics Express, 7(11), 115201. https://doi.org/10.7567/APEX.7.115201

@article{1d3531059e26486b8d9834056113bf44,

title = "Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation",

abstract = "Among promising color centers for single-photon sources in diamond, the negatively charged silicon-vacancy (SiV\%) has 70\% of its emission to the zero-phonon line (ZPL), in contrast to the negatively charged nitrogen vacancy (NV-), which has a broad spectrum. Fabricating single centers of useful defect complexes with high yield and excellent grown-in defect properties by ion implantation has proven to be challenging. We have fabricated bright single SiV- centers by 60-keV focused ion beam implantation and subsequent annealing at 1000 °C with high positioning accuracy and a high yield of 15\%.",

author = "Syuto Tamura and Godai Koike and Akira Komatsubara and Tokuyuki Teraji and Shinobu Onoda and McGuinness, \{Liam P.\} and Lachlan Rogers and Boris Naydenov and E. Wu and Liu Yan and Fedor Jelezko and Takeshi Ohshima and Junichi Isoya and Takahiro Shinada and Takashi Tanii",

note = "Publisher Copyright: {\textcopyright} 2014 The Japan Society of Applied Physics",

year = "2014",

month = nov,

day = "1",

doi = "10.7567/APEX.7.115201",

language = "英语",

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Tamura, S, Koike, G, Komatsubara, A, Teraji, T, Onoda, S, McGuinness, LP, Rogers, L, Naydenov, B, Wu, E, Yan, L, Jelezko, F, Ohshima, T, Isoya, J, Shinada, T & Tanii, T 2014, 'Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation', Applied Physics Express, 卷 7, 号码 11, 页码 115201. https://doi.org/10.7567/APEX.7.115201

TY - JOUR

T1 - Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation

AU - Tamura, Syuto

AU - Koike, Godai

AU - Komatsubara, Akira

AU - Teraji, Tokuyuki

AU - Onoda, Shinobu

AU - McGuinness, Liam P.

AU - Rogers, Lachlan

AU - Naydenov, Boris

AU - Wu, E.

AU - Yan, Liu

AU - Jelezko, Fedor

AU - Ohshima, Takeshi

AU - Isoya, Junichi

AU - Shinada, Takahiro

AU - Tanii, Takashi

PY - 2014/11/1

Y1 - 2014/11/1

N2 - Among promising color centers for single-photon sources in diamond, the negatively charged silicon-vacancy (SiV%) has 70% of its emission to the zero-phonon line (ZPL), in contrast to the negatively charged nitrogen vacancy (NV-), which has a broad spectrum. Fabricating single centers of useful defect complexes with high yield and excellent grown-in defect properties by ion implantation has proven to be challenging. We have fabricated bright single SiV- centers by 60-keV focused ion beam implantation and subsequent annealing at 1000 °C with high positioning accuracy and a high yield of 15%.

AB - Among promising color centers for single-photon sources in diamond, the negatively charged silicon-vacancy (SiV%) has 70% of its emission to the zero-phonon line (ZPL), in contrast to the negatively charged nitrogen vacancy (NV-), which has a broad spectrum. Fabricating single centers of useful defect complexes with high yield and excellent grown-in defect properties by ion implantation has proven to be challenging. We have fabricated bright single SiV- centers by 60-keV focused ion beam implantation and subsequent annealing at 1000 °C with high positioning accuracy and a high yield of 15%.

UR - https://www.scopus.com/pages/publications/84909989294

U2 - 10.7567/APEX.7.115201

DO - 10.7567/APEX.7.115201

M3 - 文章

AN - SCOPUS:84909989294

SN - 1882-0778

VL - 7

SP - 115201

JO - Applied Physics Express

JF - Applied Physics Express

IS - 11

ER -

Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation

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