Analyzing the hg_1-xCd_xTe single crystal slices by using the scanning photoluminescence technique

The Fourier transform infrared scanning photoluminescence analysis was used to study the HgCdTe bulk crystal slices, by using which, not only the 2-D distribution of the composition, but also the distribution of the ratio of radiative recombination lifetime to the non-equilibrium carrier lifetime can be obtained. Since this analyzing method is simple, fast, contactless, and non-destructive, it can be conveniently used in the process of HgCdTe-material growth and HgCdTe-devices manufacturing for quality control.