@inproceedings{a49eabb8c9f442e58372fb241dd7f72f,
title = "Analysis of nano-filament evolution in Ni-based RRAM devices using in-situ TEM",
abstract = "Resistive switching materials with the potential of being a promising candidate for nonvolatile data storage and reconfiguration of electronic applications have been intensively studied. Here we present the mechanisms of highly repeatable resistive switching of Ni based random access memory device. In-situ transmission electron microscopy was used to study the real time evolution of the physical structure and the chemical composition of the nanofilament during resistive switching. Formation and breakdown of single/multiple nanofilaments was observed during the SET and RESET process, which results in an abrupt current change. Oxygen vacancies generated during soft breakdown become the metal atom migration path where forms and breaks the nanofilament under the voltage strike circulation.",
author = "Chaolun Wang and Xing Wu",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 ; Conference date: 25-10-2016 Through 28-10-2016",
year = "2016",
doi = "10.1109/ICSICT.2016.7999067",
language = "英语",
series = "2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "876--879",
editor = "Yu-Long Jiang and Ting-Ao Tang and Ru Huang",
booktitle = "2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings",
address = "美国",
}