An improved small signal model of InP HBT for millimeter-wave applications

Ao Zhang; Jianjun Gao

doi:10.1002/mop.32876

An improved small signal model of InP HBT for millimeter-wave applications

Ao Zhang
, Jianjun Gao^*

^*此作品的通讯作者

物理与电子科学学院

East China Normal University

科研成果: 期刊稿件 › 文章 › 同行评审

3 引用（Scopus）

摘要

In this letter, an improved small-signal equivalent circuit model of InP heterojunction bipolar transistors (HBTs) for millimeter-wave applications is presented. The proposed small-signal model takes into account the parasitic effect in the collector part which can effectively improve the accuracy of S parameter. In the frequency range of 2–110 GHz, good agreements between the measured and model-calculated data can be achieved to demonstrate good modeling accuracy.

源语言	英语
页（从-至）	2160-2164
页数	5
期刊	Microwave and Optical Technology Letters
卷	63
期	8
DOI	https://doi.org/10.1002/mop.32876
出版状态	已出版 - 8月 2021

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10.1002/mop.32876

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abstract = "In this letter, an improved small-signal equivalent circuit model of InP heterojunction bipolar transistors (HBTs) for millimeter-wave applications is presented. The proposed small-signal model takes into account the parasitic effect in the collector part which can effectively improve the accuracy of S parameter. In the frequency range of 2–110 GHz, good agreements between the measured and model-calculated data can be achieved to demonstrate good modeling accuracy.",

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AB - In this letter, an improved small-signal equivalent circuit model of InP heterojunction bipolar transistors (HBTs) for millimeter-wave applications is presented. The proposed small-signal model takes into account the parasitic effect in the collector part which can effectively improve the accuracy of S parameter. In the frequency range of 2–110 GHz, good agreements between the measured and model-calculated data can be achieved to demonstrate good modeling accuracy.

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KW - heterojunction bipolar transistor (HBT)

KW - millimeter-wave

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An improved small signal model of InP HBT for millimeter-wave applications

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