An improved on-wafer measurement method for PHEMT modeling for millimeter wave application

Xiuping Li; Jianjun Gao; Choi Look Law; Sheel Aditya; Georg Boeck

doi:10.1023/A:1026003921968

An improved on-wafer measurement method for PHEMT modeling for millimeter wave application

Xiuping Li^*
, Jianjun Gao
, Choi Look Law
, Sheel Aditya
, Georg Boeck

^*此作品的通讯作者

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

An improved on-wafer measurement method by using coaxial calibration instead of on-wafer calibration for PHEMT modeling is proposed in this paper. The advantage is that S-parameters of PHEMT device can be measured on wafer without impedance standard substrate (ISS) after the S-parameters of the microprobes have been determined. Excellent agreement is obtained between on-wafer calibration measurement and coaxial calibration measurements, respectively.

源语言	英语
页（从-至）	1759-1766
页数	8
期刊	International Journal of Infrared and Millimeter Waves
卷	24
期	10
DOI	https://doi.org/10.1023/A:1026003921968
出版状态	已出版 - 10月 2003
已对外发布	是

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10.1023/A:1026003921968

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引用此

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title = "An improved on-wafer measurement method for PHEMT modeling for millimeter wave application",

abstract = "An improved on-wafer measurement method by using coaxial calibration instead of on-wafer calibration for PHEMT modeling is proposed in this paper. The advantage is that S-parameters of PHEMT device can be measured on wafer without impedance standard substrate (ISS) after the S-parameters of the microprobes have been determined. Excellent agreement is obtained between on-wafer calibration measurement and coaxial calibration measurements, respectively.",

keywords = "Coaxial calibration, Microprobe, On-wafer measurement, PHEMT modeling",

author = "Xiuping Li and Jianjun Gao and Law, \{Choi Look\} and Sheel Aditya and Georg Boeck",

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AU - Li, Xiuping

AU - Gao, Jianjun

AU - Law, Choi Look

AU - Aditya, Sheel

AU - Boeck, Georg

PY - 2003/10

Y1 - 2003/10

N2 - An improved on-wafer measurement method by using coaxial calibration instead of on-wafer calibration for PHEMT modeling is proposed in this paper. The advantage is that S-parameters of PHEMT device can be measured on wafer without impedance standard substrate (ISS) after the S-parameters of the microprobes have been determined. Excellent agreement is obtained between on-wafer calibration measurement and coaxial calibration measurements, respectively.

AB - An improved on-wafer measurement method by using coaxial calibration instead of on-wafer calibration for PHEMT modeling is proposed in this paper. The advantage is that S-parameters of PHEMT device can be measured on wafer without impedance standard substrate (ISS) after the S-parameters of the microprobes have been determined. Excellent agreement is obtained between on-wafer calibration measurement and coaxial calibration measurements, respectively.

KW - Coaxial calibration

KW - Microprobe

KW - On-wafer measurement

KW - PHEMT modeling

UR - https://www.scopus.com/pages/publications/0347133212

U2 - 10.1023/A:1026003921968

DO - 10.1023/A:1026003921968

M3 - 文章

AN - SCOPUS:0347133212

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VL - 24

SP - 1759

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JO - International Journal of Infrared and Millimeter Waves

JF - International Journal of Infrared and Millimeter Waves

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ER -