An improved noise model of InP HEMT for millimeter wave application

Zhichun Li; Yuanting Lv; Ao Zhang; Jianjun Gao

doi:10.1002/jnm.3240

An improved noise model of InP HEMT for millimeter wave application

Zhichun Li
, Yuanting Lv
, Ao Zhang
, Jianjun Gao^*

^*此作品的通讯作者

物理与电子科学学院

East China Normal University
Nantong University

科研成果: 期刊稿件 › 文章 › 同行评审

2 引用（Scopus）

摘要

A new temperature noise model, including the influence of gate-drain series resistance R_gd on the noise performance for an InP HEMT, is presented in this article. An equivalent temperature T_gd of R_gd has been taken into account based on Pospieszalski's noise model. The corresponding extraction procedure of noise parameters is given. Good correlation between the simulated and measured noise parameters in the frequency range of 8–50 GHz for a wide range of bias points verify the validity of the improved noise model.

源语言	英语
文章编号	e3240
期刊	International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
卷	37
期	3
DOI	https://doi.org/10.1002/jnm.3240
出版状态	已出版 - 1 5月 2024

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title = "An improved noise model of InP HEMT for millimeter wave application",

abstract = "A new temperature noise model, including the influence of gate-drain series resistance Rgd on the noise performance for an InP HEMT, is presented in this article. An equivalent temperature Tgd of Rgd has been taken into account based on Pospieszalski's noise model. The corresponding extraction procedure of noise parameters is given. Good correlation between the simulated and measured noise parameters in the frequency range of 8–50 GHz for a wide range of bias points verify the validity of the improved noise model.",

keywords = "InP high-electron-mobility-transistor, noise equivalent-circuit model, noise parameters",

author = "Zhichun Li and Yuanting Lv and Ao Zhang and Jianjun Gao",

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AU - Li, Zhichun

AU - Lv, Yuanting

AU - Zhang, Ao

AU - Gao, Jianjun

PY - 2024/5/1

Y1 - 2024/5/1

N2 - A new temperature noise model, including the influence of gate-drain series resistance Rgd on the noise performance for an InP HEMT, is presented in this article. An equivalent temperature Tgd of Rgd has been taken into account based on Pospieszalski's noise model. The corresponding extraction procedure of noise parameters is given. Good correlation between the simulated and measured noise parameters in the frequency range of 8–50 GHz for a wide range of bias points verify the validity of the improved noise model.

AB - A new temperature noise model, including the influence of gate-drain series resistance Rgd on the noise performance for an InP HEMT, is presented in this article. An equivalent temperature Tgd of Rgd has been taken into account based on Pospieszalski's noise model. The corresponding extraction procedure of noise parameters is given. Good correlation between the simulated and measured noise parameters in the frequency range of 8–50 GHz for a wide range of bias points verify the validity of the improved noise model.

KW - InP high-electron-mobility-transistor

KW - noise equivalent-circuit model

KW - noise parameters

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DO - 10.1002/jnm.3240

M3 - 文章

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JO - International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

JF - International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

IS - 3

M1 - e3240

ER -

An improved noise model of InP HEMT for millimeter wave application

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