An improved de-embedding procedure for nanometer MOSFET small signal modeling

Ying Zhou; Panpan Yu; Na Yan; Jianjun Gao

doi:10.1016/j.mejo.2016.08.017

An improved de-embedding procedure for nanometer MOSFET small signal modeling

Ying Zhou^*
, Panpan Yu
, Na Yan
, Jianjun Gao

^*此作品的通讯作者

物理与电子科学学院

East China Normal University
Fudan University

科研成果: 期刊稿件 › 文章 › 同行评审

2 引用（Scopus）

摘要

An improved equivalent circuit model of the short test structure for nanometer metal-oxide-semiconductor field-effect transistor (MOSFET) device modeling is proposed in this paper. The skin effect of the feedlines is taken into account in the proposed model. The corresponding de-embedding method which is different from the conventional open/short de-embedding method is also presented here. A semi-analytical method has been used to determine the MOSFET small signal model parameters. Good agreement is obtained between the simulated and measured results for 90 nm MOSFETs in the frequency range of 1–40 GHz.

源语言	英语
页（从-至）	60-65
页数	6
期刊	Microelectronics
卷	57
DOI	https://doi.org/10.1016/j.mejo.2016.08.017
出版状态	已出版 - 1 11月 2016

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10.1016/j.mejo.2016.08.017

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title = "An improved de-embedding procedure for nanometer MOSFET small signal modeling",

abstract = "An improved equivalent circuit model of the short test structure for nanometer metal-oxide-semiconductor field-effect transistor (MOSFET) device modeling is proposed in this paper. The skin effect of the feedlines is taken into account in the proposed model. The corresponding de-embedding method which is different from the conventional open/short de-embedding method is also presented here. A semi-analytical method has been used to determine the MOSFET small signal model parameters. Good agreement is obtained between the simulated and measured results for 90 nm MOSFETs in the frequency range of 1–40 GHz.",

keywords = "De-embedding, MOSFET, Model, Skin effect",

author = "Ying Zhou and Panpan Yu and Na Yan and Jianjun Gao",

note = "Publisher Copyright: {\textcopyright} 2016 Elsevier Ltd",

year = "2016",

month = nov,

day = "1",

doi = "10.1016/j.mejo.2016.08.017",

language = "英语",

volume = "57",

pages = "60--65",

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TY - JOUR

T1 - An improved de-embedding procedure for nanometer MOSFET small signal modeling

AU - Zhou, Ying

AU - Yu, Panpan

AU - Yan, Na

AU - Gao, Jianjun

PY - 2016/11/1

Y1 - 2016/11/1

N2 - An improved equivalent circuit model of the short test structure for nanometer metal-oxide-semiconductor field-effect transistor (MOSFET) device modeling is proposed in this paper. The skin effect of the feedlines is taken into account in the proposed model. The corresponding de-embedding method which is different from the conventional open/short de-embedding method is also presented here. A semi-analytical method has been used to determine the MOSFET small signal model parameters. Good agreement is obtained between the simulated and measured results for 90 nm MOSFETs in the frequency range of 1–40 GHz.

AB - An improved equivalent circuit model of the short test structure for nanometer metal-oxide-semiconductor field-effect transistor (MOSFET) device modeling is proposed in this paper. The skin effect of the feedlines is taken into account in the proposed model. The corresponding de-embedding method which is different from the conventional open/short de-embedding method is also presented here. A semi-analytical method has been used to determine the MOSFET small signal model parameters. Good agreement is obtained between the simulated and measured results for 90 nm MOSFETs in the frequency range of 1–40 GHz.

KW - De-embedding

KW - MOSFET

KW - Model

KW - Skin effect

UR - https://www.scopus.com/pages/publications/84992151594

U2 - 10.1016/j.mejo.2016.08.017

DO - 10.1016/j.mejo.2016.08.017

M3 - 文章

AN - SCOPUS:84992151594

SN - 0026-2692

VL - 57

SP - 60

EP - 65

JO - Microelectronics

JF - Microelectronics

ER -

An improved de-embedding procedure for nanometer MOSFET small signal modeling

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