An Improved Anti-Parallel Schottky Diode Modeling and Parameter Extraction for Mixer Design

The modeling and parameter extraction of the anti-parallel GaAs Schottky diode for terahertz monolithic-integrated circuit (TMIC) design is proposed in this article. The main advantage is that the anti-parallel air-bridged GaAs Schottky diode pair is considered as an elementary, and the pad distributed effect and air-bridge inductances have been taken into account to improve model accuracy. Good agreement between the measured and simulated two-port S-parameters under turn-on and turn-off biased conditions in the frequency range of 1-170 and 220-325 GHz is obtained. A 220-GHz subharmonic mixer TMIC has been designed successfully to verify the accuracy of the device model.