摘要
To study the β decays of nuclei far from the β-stability line, an implantation and β detection system has been implemented at the Peking University. This detection system covers a wide energy range from keV to GeV while maintaining a good energy resolution and a low detection threshold. By correlating the implantation nuclei with their subsequent β-decays within the same pixel or adjacent pixels of a double-sided silicon detector (DSSD), the β decay properties of implanted nuclei can be measured with much less disturbance from other unstable nuclei and the random background.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 52-55 |
| 页数 | 4 |
| 期刊 | Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment |
| 卷 | 747 |
| DOI | |
| 出版状态 | 已出版 - 21 5月 2014 |
| 已对外发布 | 是 |
指纹
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