An approach for determining thermal resistance model parameters of SiGe HBT

Boran Wang; Ao Zhang; Yixin Zhang; Jianjun Gao

doi:10.1002/jnm.2616

An approach for determining thermal resistance model parameters of SiGe HBT

Boran Wang
, Ao Zhang
, Yixin Zhang
, Jianjun Gao^*

^*此作品的通讯作者

物理与电子科学学院

East China Normal University

科研成果: 期刊稿件 › 文章 › 同行评审

3 引用（Scopus）

摘要

This paper presents an improved method for determining the thermal resistance and junction temperature for silicon germanium heterojunction bipolar transistors. This method is a full analytical procedure without any iteration based on a set of accurate expressions. The thermal resistance is tested against iterative and analytic methods reported before. Good agreement is obtained between simulated and measured results for three SiGe devices with different emitter geometries.

源语言	英语
文章编号	e2616
期刊	International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
卷	33
期	3
DOI	https://doi.org/10.1002/jnm.2616
出版状态	已出版 - 1 5月 2020

访问文件

10.1002/jnm.2616

其它文件与链接

链接到 Scopus 的出版物

引用此

@article{1bd40894b0f0485eb2b78a462c24233a,

title = "An approach for determining thermal resistance model parameters of SiGe HBT",

abstract = "This paper presents an improved method for determining the thermal resistance and junction temperature for silicon germanium heterojunction bipolar transistors. This method is a full analytical procedure without any iteration based on a set of accurate expressions. The thermal resistance is tested against iterative and analytic methods reported before. Good agreement is obtained between simulated and measured results for three SiGe devices with different emitter geometries.",

keywords = "analytic method, back end of line (BEOL), silicon germanium heterojunction bipolar transistors, thermal resistance",

author = "Boran Wang and Ao Zhang and Yixin Zhang and Jianjun Gao",

note = "Publisher Copyright: {\textcopyright} 2019 John Wiley \& Sons, Ltd.",

year = "2020",

month = may,

day = "1",

doi = "10.1002/jnm.2616",

language = "英语",

volume = "33",

journal = "International Journal of Numerical Modelling: Electronic Networks, Devices and Fields",

issn = "0894-3370",

publisher = "John Wiley and Sons Ltd",

number = "3",

}

TY - JOUR

T1 - An approach for determining thermal resistance model parameters of SiGe HBT

AU - Wang, Boran

AU - Zhang, Ao

AU - Zhang, Yixin

AU - Gao, Jianjun

PY - 2020/5/1

Y1 - 2020/5/1

N2 - This paper presents an improved method for determining the thermal resistance and junction temperature for silicon germanium heterojunction bipolar transistors. This method is a full analytical procedure without any iteration based on a set of accurate expressions. The thermal resistance is tested against iterative and analytic methods reported before. Good agreement is obtained between simulated and measured results for three SiGe devices with different emitter geometries.

AB - This paper presents an improved method for determining the thermal resistance and junction temperature for silicon germanium heterojunction bipolar transistors. This method is a full analytical procedure without any iteration based on a set of accurate expressions. The thermal resistance is tested against iterative and analytic methods reported before. Good agreement is obtained between simulated and measured results for three SiGe devices with different emitter geometries.

KW - analytic method

KW - back end of line (BEOL)

KW - silicon germanium heterojunction bipolar transistors

KW - thermal resistance

UR - https://www.scopus.com/pages/publications/85066144521

U2 - 10.1002/jnm.2616

DO - 10.1002/jnm.2616

M3 - 文章

AN - SCOPUS:85066144521

SN - 0894-3370

VL - 33

JO - International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

JF - International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

IS - 3

M1 - e2616

ER -

An approach for determining thermal resistance model parameters of SiGe HBT

摘要

访问文件

其它文件与链接

指纹

引用此