TY - GEN
T1 - An Applied Model for HCI and Lifetime Prediction of LDMOSFET
AU - Chen, Tao
AU - Sun, Yabin
AU - Shi, Yanling
AU - Li, Xiaojin
AU - Liu, Yun
N1 - Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - Hot carrier injection (HCI) degradation has been an important problem limiting the life of semiconductor devices. In this work, the degradation of threshold voltage (VTH) induced by HCI is evaluated for power laterally diffused metal oxide semiconductor field effect transistor (LDMOSFET). The experiment results demonstrate that VTH degradation presents a significant dependence of stress bias, size and temperature. Then an applied model is proposed to characterize the degradation induced by HCI, and are validated with a series of sized LDMOSFET under different stress bias and temperature. An excellent agreement is obtained between the measured and modeled VTH degradation. Based on the proposed degradation model, HCI lifetime of LDMOSFET is also predicted. The proposed model here are reliable to evaluate the fabrication process, optimize the device structure of power LDMOSFET.
AB - Hot carrier injection (HCI) degradation has been an important problem limiting the life of semiconductor devices. In this work, the degradation of threshold voltage (VTH) induced by HCI is evaluated for power laterally diffused metal oxide semiconductor field effect transistor (LDMOSFET). The experiment results demonstrate that VTH degradation presents a significant dependence of stress bias, size and temperature. Then an applied model is proposed to characterize the degradation induced by HCI, and are validated with a series of sized LDMOSFET under different stress bias and temperature. An excellent agreement is obtained between the measured and modeled VTH degradation. Based on the proposed degradation model, HCI lifetime of LDMOSFET is also predicted. The proposed model here are reliable to evaluate the fabrication process, optimize the device structure of power LDMOSFET.
UR - https://www.scopus.com/pages/publications/85143984614
U2 - 10.1109/ICSICT55466.2022.9963390
DO - 10.1109/ICSICT55466.2022.9963390
M3 - 会议稿件
AN - SCOPUS:85143984614
T3 - Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022
BT - Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022
A2 - Ye, Fan
A2 - Tang, Ting-Ao
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 16th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022
Y2 - 25 October 2022 through 28 October 2022
ER -