Al1.3Sb3Te material for phase change memory application

Cheng Peng; Zhitang Song; Feng Rao; Liangcai Wu; Min Zhu; Hongjia Song; Bo Liu; Xilin Zhou; Dongning Yao; Pingxiong Yang; Junhao Chu

doi:10.1063/1.3616146

Al_1.3Sb₃Te material for phase change memory application

Cheng Peng^*
, Zhitang Song
, Feng Rao
, Liangcai Wu
, Min Zhu
, Hongjia Song
, Bo Liu
, Xilin Zhou
, Dongning Yao
, Pingxiong Yang
, Junhao Chu

^*此作品的通讯作者

物理与电子科学学院

CAS - Shanghai Institute of Microsystem and Information Technology
East China Normal University

科研成果: 期刊稿件 › 文章 › 同行评审

59 引用（Scopus）

摘要

Comparing with Ge₂Sb₂Te₅, Al _1.3Sb₃Te is proved to be a promising candidate for phase-change memory use because of its higher crystallization temperature (∼210 °C), larger crystallization activation energy (3.32 eV), and better data retention ability (124 °C for 10 yr). Furthermore, Al _1.3Sb₃Te shows fast phase change speed and crystallizes into a uniformly embedded crystal structure. As short as 10 ns width, voltage pulse can realize reversible operations for Al_1.3Sb₃Te based phase-change memory cell. Moreover, phase-change memory cell based on Al_1.3Sb₃Te material also has good endurance (∼2.5 × 10⁴ cycles) and an enough resistance ratio of ∼10 ².

源语言	英语
期刊论文编号	043105
期刊	Applied Physics Letters
卷	99
期	4
DOI	https://doi.org/10.1063/1.3616146
出版状态	已出版 - 25 7月 2011

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@article{6835435d35274b808913a48b79c264e1,

title = "Al1.3Sb3Te material for phase change memory application",

abstract = "Comparing with Ge2Sb2Te5, Al 1.3Sb3Te is proved to be a promising candidate for phase-change memory use because of its higher crystallization temperature (∼210 °C), larger crystallization activation energy (3.32 eV), and better data retention ability (124 °C for 10 yr). Furthermore, Al 1.3Sb3Te shows fast phase change speed and crystallizes into a uniformly embedded crystal structure. As short as 10 ns width, voltage pulse can realize reversible operations for Al1.3Sb3Te based phase-change memory cell. Moreover, phase-change memory cell based on Al1.3Sb3Te material also has good endurance (∼2.5 {\texttimes} 104 cycles) and an enough resistance ratio of ∼10 2.",

author = "Cheng Peng and Zhitang Song and Feng Rao and Liangcai Wu and Min Zhu and Hongjia Song and Bo Liu and Xilin Zhou and Dongning Yao and Pingxiong Yang and Junhao Chu",

year = "2011",

month = jul,

day = "25",

doi = "10.1063/1.3616146",

language = "英语",

volume = "99",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - Al1.3Sb3Te material for phase change memory application

AU - Peng, Cheng

AU - Song, Zhitang

AU - Rao, Feng

AU - Wu, Liangcai

AU - Zhu, Min

AU - Song, Hongjia

AU - Liu, Bo

AU - Zhou, Xilin

AU - Yao, Dongning

AU - Yang, Pingxiong

AU - Chu, Junhao

PY - 2011/7/25

Y1 - 2011/7/25

N2 - Comparing with Ge2Sb2Te5, Al 1.3Sb3Te is proved to be a promising candidate for phase-change memory use because of its higher crystallization temperature (∼210 °C), larger crystallization activation energy (3.32 eV), and better data retention ability (124 °C for 10 yr). Furthermore, Al 1.3Sb3Te shows fast phase change speed and crystallizes into a uniformly embedded crystal structure. As short as 10 ns width, voltage pulse can realize reversible operations for Al1.3Sb3Te based phase-change memory cell. Moreover, phase-change memory cell based on Al1.3Sb3Te material also has good endurance (∼2.5 × 104 cycles) and an enough resistance ratio of ∼10 2.

AB - Comparing with Ge2Sb2Te5, Al 1.3Sb3Te is proved to be a promising candidate for phase-change memory use because of its higher crystallization temperature (∼210 °C), larger crystallization activation energy (3.32 eV), and better data retention ability (124 °C for 10 yr). Furthermore, Al 1.3Sb3Te shows fast phase change speed and crystallizes into a uniformly embedded crystal structure. As short as 10 ns width, voltage pulse can realize reversible operations for Al1.3Sb3Te based phase-change memory cell. Moreover, phase-change memory cell based on Al1.3Sb3Te material also has good endurance (∼2.5 × 104 cycles) and an enough resistance ratio of ∼10 2.

UR - https://www.scopus.com/pages/publications/79961099522

U2 - 10.1063/1.3616146

DO - 10.1063/1.3616146

M3 - 文章

AN - SCOPUS:79961099522

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 043105

ER -

Al1.3Sb3Te material for phase change memory application

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Al_1.3Sb₃Te material for phase change memory application