Aging-induced abnormality of dielectric response under dc bias in Ba(Zr, Ti)O3 thin films

C. Gao; J. Yang; X. J. Meng; T. Lin; J. H. Ma; J. L. Sun; J. H. Chu

doi:10.1007/s00339-010-6076-3

Aging-induced abnormality of dielectric response under dc bias in Ba(Zr, Ti)O₃ thin films

C. Gao^*
, J. Yang
, X. J. Meng
, T. Lin
, J. H. Ma
, J. L. Sun
, J. H. Chu

^*此作品的通讯作者

物理与电子科学学院

CAS - Shanghai Institute of Technical Physics
East China Normal University

科研成果: 期刊稿件 › 文章 › 同行评审

14 引用（Scopus）

摘要

The dielectric properties of fresh and aged Ba(Zr_0.25Ti _0.75)O₃ thin films have been investigated. It is found that the aged sample shows a significant decrease in the dielectric constant compared to the fresh one. Furthermore, the aged sample also exhibits abnormal double-peaks-shape butterfly C-V characteristics, which indicates the defect-dipole stabilized domain and/or domain-wall motions. Meanwhile, we found that double-peaks-shape butterfly C-V characteristics become weak and even disappear with increasing of applied electric field and temperature. The present results are discussed in light of the symmetry-conforming principle of point defects.

源语言	英语
页（从-至）	123-128
页数	6
期刊	Applied Physics A: Materials Science and Processing
卷	104
期	1
DOI	https://doi.org/10.1007/s00339-010-6076-3
出版状态	已出版 - 7月 2011

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abstract = "The dielectric properties of fresh and aged Ba(Zr0.25Ti 0.75)O3 thin films have been investigated. It is found that the aged sample shows a significant decrease in the dielectric constant compared to the fresh one. Furthermore, the aged sample also exhibits abnormal double-peaks-shape butterfly C-V characteristics, which indicates the defect-dipole stabilized domain and/or domain-wall motions. Meanwhile, we found that double-peaks-shape butterfly C-V characteristics become weak and even disappear with increasing of applied electric field and temperature. The present results are discussed in light of the symmetry-conforming principle of point defects.",

author = "C. Gao and J. Yang and Meng, \{X. J.\} and T. Lin and Ma, \{J. H.\} and Sun, \{J. L.\} and Chu, \{J. H.\}",

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T1 - Aging-induced abnormality of dielectric response under dc bias in Ba(Zr, Ti)O3 thin films

AU - Gao, C.

AU - Yang, J.

AU - Meng, X. J.

AU - Lin, T.

AU - Ma, J. H.

AU - Sun, J. L.

AU - Chu, J. H.

PY - 2011/7

Y1 - 2011/7

N2 - The dielectric properties of fresh and aged Ba(Zr0.25Ti 0.75)O3 thin films have been investigated. It is found that the aged sample shows a significant decrease in the dielectric constant compared to the fresh one. Furthermore, the aged sample also exhibits abnormal double-peaks-shape butterfly C-V characteristics, which indicates the defect-dipole stabilized domain and/or domain-wall motions. Meanwhile, we found that double-peaks-shape butterfly C-V characteristics become weak and even disappear with increasing of applied electric field and temperature. The present results are discussed in light of the symmetry-conforming principle of point defects.

AB - The dielectric properties of fresh and aged Ba(Zr0.25Ti 0.75)O3 thin films have been investigated. It is found that the aged sample shows a significant decrease in the dielectric constant compared to the fresh one. Furthermore, the aged sample also exhibits abnormal double-peaks-shape butterfly C-V characteristics, which indicates the defect-dipole stabilized domain and/or domain-wall motions. Meanwhile, we found that double-peaks-shape butterfly C-V characteristics become weak and even disappear with increasing of applied electric field and temperature. The present results are discussed in light of the symmetry-conforming principle of point defects.

UR - https://www.scopus.com/pages/publications/79959216894

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DO - 10.1007/s00339-010-6076-3

M3 - 文章

AN - SCOPUS:79959216894

SN - 0947-8396

VL - 104

SP - 123

EP - 128

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 1

ER -

Aging-induced abnormality of dielectric response under dc bias in Ba(Zr, Ti)O3 thin films

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Aging-induced abnormality of dielectric response under dc bias in Ba(Zr, Ti)O₃ thin films