Advantage of Ti-doped Ge2Sb2Te5 material for phase change memory applications

Liangliang Cao; Xinglong Ji; Wenqing Zhu; Qiumin She; Yan Chen; Zhigao Hu; Shuang Guo; Zhitang Song; Feng Rao; Bo Qian; Liangcai Wu

doi:10.1149/2.0081512ssl

Advantage of Ti-doped Ge₂Sb₂Te₅ material for phase change memory applications

Liangliang Cao
, Xinglong Ji
, Wenqing Zhu
, Qiumin She
, Yan Chen
, Zhigao Hu
, Shuang Guo
, Zhitang Song
, Feng Rao
, Bo Qian
, Liangcai Wu

物理与电子科学学院

Shanghai University
CAS - Shanghai Institute of Microsystem and Information Technology
Donghua University
East China Normal University

科研成果: 期刊稿件 › 文章 › 同行评审

22 引用（Scopus）

摘要

Ti-doped Ge₂Sb₂Te₅ (GSTT) materials have been investigated for phase change memory (PCM) applications. Compared with GST, GSTT5.67% phase change material has a higher crystallization temperature (∼230°C), a higher crystallization activation energy (2.79 eV) and a better data retention ability (∼134°C for 10-year). The PCM cell based on GSTT5.67% exhibits lower power consumption than GST based one. Endurance up to 1 × 10⁴ cycles with high/low resistance ratio of over one order of magnitude has been achieved.

源语言	英语
页（从-至）	P102-P104
期刊	ECS Solid State Letters
卷	4
期	12
DOI	https://doi.org/10.1149/2.0081512ssl
出版状态	已出版 - 2015

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@article{8cb14264da0f4e96bc4b1e06557f95cd,

title = "Advantage of Ti-doped Ge2Sb2Te5 material for phase change memory applications",

abstract = "Ti-doped Ge2Sb2Te5 (GSTT) materials have been investigated for phase change memory (PCM) applications. Compared with GST, GSTT5.67\% phase change material has a higher crystallization temperature (∼230°C), a higher crystallization activation energy (2.79 eV) and a better data retention ability (∼134°C for 10-year). The PCM cell based on GSTT5.67\% exhibits lower power consumption than GST based one. Endurance up to 1 × 104 cycles with high/low resistance ratio of over one order of magnitude has been achieved.",

author = "Liangliang Cao and Xinglong Ji and Wenqing Zhu and Qiumin She and Yan Chen and Zhigao Hu and Shuang Guo and Zhitang Song and Feng Rao and Bo Qian and Liangcai Wu",

year = "2015",

doi = "10.1149/2.0081512ssl",

language = "英语",

volume = "4",

pages = "P102--P104",

journal = "ECS Solid State Letters",

issn = "2162-8742",

publisher = "The Electrochemical Society",

number = "12",

}

TY - JOUR

T1 - Advantage of Ti-doped Ge2Sb2Te5 material for phase change memory applications

AU - Cao, Liangliang

AU - Ji, Xinglong

AU - Zhu, Wenqing

AU - She, Qiumin

AU - Chen, Yan

AU - Hu, Zhigao

AU - Guo, Shuang

AU - Song, Zhitang

AU - Rao, Feng

AU - Qian, Bo

AU - Wu, Liangcai

PY - 2015

Y1 - 2015

N2 - Ti-doped Ge2Sb2Te5 (GSTT) materials have been investigated for phase change memory (PCM) applications. Compared with GST, GSTT5.67% phase change material has a higher crystallization temperature (∼230°C), a higher crystallization activation energy (2.79 eV) and a better data retention ability (∼134°C for 10-year). The PCM cell based on GSTT5.67% exhibits lower power consumption than GST based one. Endurance up to 1 × 104 cycles with high/low resistance ratio of over one order of magnitude has been achieved.

AB - Ti-doped Ge2Sb2Te5 (GSTT) materials have been investigated for phase change memory (PCM) applications. Compared with GST, GSTT5.67% phase change material has a higher crystallization temperature (∼230°C), a higher crystallization activation energy (2.79 eV) and a better data retention ability (∼134°C for 10-year). The PCM cell based on GSTT5.67% exhibits lower power consumption than GST based one. Endurance up to 1 × 104 cycles with high/low resistance ratio of over one order of magnitude has been achieved.

UR - https://www.scopus.com/pages/publications/84947704972

U2 - 10.1149/2.0081512ssl

DO - 10.1149/2.0081512ssl

M3 - 文章

AN - SCOPUS:84947704972

SN - 2162-8742

VL - 4

SP - P102-P104

JO - ECS Solid State Letters

JF - ECS Solid State Letters

IS - 12

ER -

Advantage of Ti-doped Ge2Sb2Te5 material for phase change memory applications

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Advantage of Ti-doped Ge₂Sb₂Te₅ material for phase change memory applications