Ablation induced by femtosecond laser in sapphire

Xiaoxi Li; Tianqin Jia; Donghai Feng; Zhizhan Xu

doi:10.1016/j.apsusc.2003.10.044

Ablation induced by femtosecond laser in sapphire

Xiaoxi Li^*
, Tianqin Jia
, Donghai Feng
, Zhizhan Xu

^*此作品的通讯作者

CAS - Shanghai Institute of Optics and Fine Mechanics

科研成果: 期刊稿件 › 文章 › 同行评审

40 引用（Scopus）

摘要

Based on the linearity of ablated area and laser pulse energy, the threshold fluence of sapphire is determined accurately in this paper. Meanwhile the dependences of F _th on pulse duration (τ < 1 ps) with laser at 400 and 800nm are presented, respectively. It is found that the experiment results agree well with the theoretical calculations based on avalanche model. And we discuss the photon absorption mechanism of the conduction band electrons in Al ₂ O ₃ single crystal.

源语言	英语
页（从-至）	339-346
页数	8
期刊	Applied Surface Science
卷	225
期	1-4
DOI	https://doi.org/10.1016/j.apsusc.2003.10.044
出版状态	已出版 - 30 3月 2004
已对外发布	是

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title = "Ablation induced by femtosecond laser in sapphire",

abstract = " Based on the linearity of ablated area and laser pulse energy, the threshold fluence of sapphire is determined accurately in this paper. Meanwhile the dependences of F th on pulse duration (τ < 1 ps) with laser at 400 and 800nm are presented, respectively. It is found that the experiment results agree well with the theoretical calculations based on avalanche model. And we discuss the photon absorption mechanism of the conduction band electrons in Al 2 O 3 single crystal.",

keywords = "Ablation, Femtosecond laser, Sapphire",

author = "Xiaoxi Li and Tianqin Jia and Donghai Feng and Zhizhan Xu",

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AU - Li, Xiaoxi

AU - Jia, Tianqin

AU - Feng, Donghai

AU - Xu, Zhizhan

PY - 2004/3/30

Y1 - 2004/3/30

N2 - Based on the linearity of ablated area and laser pulse energy, the threshold fluence of sapphire is determined accurately in this paper. Meanwhile the dependences of F th on pulse duration (τ < 1 ps) with laser at 400 and 800nm are presented, respectively. It is found that the experiment results agree well with the theoretical calculations based on avalanche model. And we discuss the photon absorption mechanism of the conduction band electrons in Al 2 O 3 single crystal.

AB - Based on the linearity of ablated area and laser pulse energy, the threshold fluence of sapphire is determined accurately in this paper. Meanwhile the dependences of F th on pulse duration (τ < 1 ps) with laser at 400 and 800nm are presented, respectively. It is found that the experiment results agree well with the theoretical calculations based on avalanche model. And we discuss the photon absorption mechanism of the conduction band electrons in Al 2 O 3 single crystal.

KW - Ablation

KW - Femtosecond laser

KW - Sapphire

UR - https://www.scopus.com/pages/publications/1342265795

U2 - 10.1016/j.apsusc.2003.10.044

DO - 10.1016/j.apsusc.2003.10.044

M3 - 文章

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EP - 346

JO - Applied Surface Science

JF - Applied Surface Science

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ER -

Ablation induced by femtosecond laser in sapphire

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