@inproceedings{a368b5aa83484e68b78bbd1fe7992ee6,
title = "A Symmetric Multilayer GeSe/GeSeSbTe Ovonic Threshold Switching Selector with Improved Endurance and Stability",
abstract = "Ovonic threshold switching (OTS) selector is becoming the most suitable candidate for selector devices in memristor crossbar array, owing to its high selectivity and fast response time. However, device endurance and variance are persistent tricky problems for application. In this article, a novel symmetric multilayer OTS selector based on simple GeSe and SbTe-doped GeSe was investigated. The results showed improving selector performed extraordinary endurance up to 1010 and the fluctuation of threshold voltage is 1.5 \%. These developments pave the way towards tuning a new class of OTS materials engineering, ensuring improvement of electrical performances.",
keywords = "endurance, GeSe, Ovonic threshold switch, selector, stability, symmetric multilayer structure",
author = "Shiqing Zhang and Bing Song and Shujing Jia and Rongrong Cao and Sen Liu and Hui Xu and Qingjiang Li",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2021 ; Conference date: 24-11-2021 Through 26-11-2021",
year = "2021",
doi = "10.1109/ICTA53157.2021.9661914",
language = "英语",
series = "2021 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2021",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "45--46",
booktitle = "2021 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2021",
address = "美国",
}