A submicron PHEMT nonlinear model suitable for RFID low current amplifier design

Jianjun Gao; Choi Look Law; Hong Wang; Sheel Aditya; Zhongxiang Shen

doi:10.1080/00207210310001621518

A submicron PHEMT nonlinear model suitable for RFID low current amplifier design

Jianjun Gao^*
, Choi Look Law
, Hong Wang
, Sheel Aditya
, Zhongxiang Shen

^*此作品的通讯作者

Nanyang Technological University

科研成果: 期刊稿件 › 文章 › 同行评审

5 引用（Scopus）

摘要

The development of nonlinear pseudomorphic high electron mobility transistors (PHEMT) model up to 40 GHz suitable for radio frequency identification (RFID) low current applications was described. Good agreement was obtained between simulation results and measured results for the PHEMT device and 2.45 GHz and 5.8 GHz amplifier performances. The model was found to be suitable for implementation into Agilent ADS to perform various analyses of PHEMT.

源语言	英语
页（从-至）	433-443
页数	11
期刊	International Journal of Electronics
卷	90
期	7
DOI	https://doi.org/10.1080/00207210310001621518
出版状态	已出版 - 7月 2003
已对外发布	是

访问文件

10.1080/00207210310001621518

其它文件与链接

链接到 Scopus 的出版物

引用此

@article{4b2a368bde0543d68920691b8887924d,

title = "A submicron PHEMT nonlinear model suitable for RFID low current amplifier design",

abstract = "The development of nonlinear pseudomorphic high electron mobility transistors (PHEMT) model up to 40 GHz suitable for radio frequency identification (RFID) low current applications was described. Good agreement was obtained between simulation results and measured results for the PHEMT device and 2.45 GHz and 5.8 GHz amplifier performances. The model was found to be suitable for implementation into Agilent ADS to perform various analyses of PHEMT.",

author = "Jianjun Gao and Law, \{Choi Look\} and Hong Wang and Sheel Aditya and Zhongxiang Shen",

year = "2003",

month = jul,

doi = "10.1080/00207210310001621518",

language = "英语",

volume = "90",

pages = "433--443",

journal = "International Journal of Electronics",

issn = "0020-7217",

publisher = "Taylor and Francis Ltd.",

number = "7",

}

TY - JOUR

T1 - A submicron PHEMT nonlinear model suitable for RFID low current amplifier design

AU - Gao, Jianjun

AU - Law, Choi Look

AU - Wang, Hong

AU - Aditya, Sheel

AU - Shen, Zhongxiang

PY - 2003/7

Y1 - 2003/7

N2 - The development of nonlinear pseudomorphic high electron mobility transistors (PHEMT) model up to 40 GHz suitable for radio frequency identification (RFID) low current applications was described. Good agreement was obtained between simulation results and measured results for the PHEMT device and 2.45 GHz and 5.8 GHz amplifier performances. The model was found to be suitable for implementation into Agilent ADS to perform various analyses of PHEMT.

AB - The development of nonlinear pseudomorphic high electron mobility transistors (PHEMT) model up to 40 GHz suitable for radio frequency identification (RFID) low current applications was described. Good agreement was obtained between simulation results and measured results for the PHEMT device and 2.45 GHz and 5.8 GHz amplifier performances. The model was found to be suitable for implementation into Agilent ADS to perform various analyses of PHEMT.

UR - https://www.scopus.com/pages/publications/0242468036

U2 - 10.1080/00207210310001621518

DO - 10.1080/00207210310001621518

M3 - 文章

AN - SCOPUS:0242468036

SN - 0020-7217

VL - 90

SP - 433

EP - 443

JO - International Journal of Electronics

JF - International Journal of Electronics

IS - 7

ER -

A submicron PHEMT nonlinear model suitable for RFID low current amplifier design

摘要

访问文件

其它文件与链接

指纹

引用此