A small-signal equivalent-circuit model of quantum-well lasers based on three-level rate equations

Gao Jianjun; Gao Baoxin; Liang Chunguang

doi:10.1002/mop.1287

A small-signal equivalent-circuit model of quantum-well lasers based on three-level rate equations

Gao Jianjun^*
, Gao Baoxin
, Liang Chunguang

^*此作品的通讯作者

科研成果: 期刊稿件 › 文章 › 同行评审

5 引用（Scopus）

摘要

An intrinsic equivalent-circuit model for quantum-well lasers is presented. The model is based on the three-level rate equations, and includes the carrier transport effects and the role of the gateway state at the quantum well. The simulation results of the frequency response are compared with experimentally obtained data, and agreement is obtained consistently on separate confinement heterostructures (SCHs) of different sizes.

源语言	英语
页（从-至）	270-271
页数	2
期刊	Microwave and Optical Technology Letters
卷	30
期	4
DOI	https://doi.org/10.1002/mop.1287
出版状态	已出版 - 20 8月 2001
已对外发布	是

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10.1002/mop.1287

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abstract = "An intrinsic equivalent-circuit model for quantum-well lasers is presented. The model is based on the three-level rate equations, and includes the carrier transport effects and the role of the gateway state at the quantum well. The simulation results of the frequency response are compared with experimentally obtained data, and agreement is obtained consistently on separate confinement heterostructures (SCHs) of different sizes.",

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AU - Baoxin, Gao

AU - Chunguang, Liang

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Y1 - 2001/8/20

N2 - An intrinsic equivalent-circuit model for quantum-well lasers is presented. The model is based on the three-level rate equations, and includes the carrier transport effects and the role of the gateway state at the quantum well. The simulation results of the frequency response are compared with experimentally obtained data, and agreement is obtained consistently on separate confinement heterostructures (SCHs) of different sizes.

AB - An intrinsic equivalent-circuit model for quantum-well lasers is presented. The model is based on the three-level rate equations, and includes the carrier transport effects and the role of the gateway state at the quantum well. The simulation results of the frequency response are compared with experimentally obtained data, and agreement is obtained consistently on separate confinement heterostructures (SCHs) of different sizes.

KW - Equivalent-circuit models

KW - Quantum-well laser

UR - https://www.scopus.com/pages/publications/0035921123

U2 - 10.1002/mop.1287

DO - 10.1002/mop.1287

M3 - 文章

AN - SCOPUS:0035921123

SN - 0895-2477

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SP - 270

EP - 271

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

IS - 4

ER -

A small-signal equivalent-circuit model of quantum-well lasers based on three-level rate equations

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