A semi-analytical small signal parameter extraction method for millimeter HEMT

Cai Yun Fan; Jian Jun Gao

doi:10.3724/SP.J.1010.2014.00072

A semi-analytical small signal parameter extraction method for millimeter HEMT

Cai Yun Fan^*
, Jian Jun Gao

^*此作品的通讯作者

物理与电子科学学院

East China Normal University

科研成果: 期刊稿件 › 文章 › 同行评审

2 引用（Scopus）

摘要

A semi-analytical small signal parameter extraction method for high electron-mobility transistor (HEMT) under different bias conditions is presented. Based on test structure to determine the pad capacitance and parasitic inductances, the semi-analysis method is used to extract parasitic resistances and to improve the precision of the parasitic resistance in the small signal model. The agreement between the measured S-parameters and simulated ones is excellent over the frequency range up to 40 GHz under multibias condition.

源语言	英语
页（从-至）	72-77
页数	6
期刊	Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves
卷	33
期	1
DOI	https://doi.org/10.3724/SP.J.1010.2014.00072
出版状态	已出版 - 2月 2014

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title = "A semi-analytical small signal parameter extraction method for millimeter HEMT",

abstract = "A semi-analytical small signal parameter extraction method for high electron-mobility transistor (HEMT) under different bias conditions is presented. Based on test structure to determine the pad capacitance and parasitic inductances, the semi-analysis method is used to extract parasitic resistances and to improve the precision of the parasitic resistance in the small signal model. The agreement between the measured S-parameters and simulated ones is excellent over the frequency range up to 40 GHz under multibias condition.",

keywords = "High electron-mobility transistor, Multibias condition, Parasitic resistances, Semi-analysis method, Small signal model",

author = "Fan, \{Cai Yun\} and Gao, \{Jian Jun\}",

year = "2014",

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doi = "10.3724/SP.J.1010.2014.00072",

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AU - Gao, Jian Jun

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N2 - A semi-analytical small signal parameter extraction method for high electron-mobility transistor (HEMT) under different bias conditions is presented. Based on test structure to determine the pad capacitance and parasitic inductances, the semi-analysis method is used to extract parasitic resistances and to improve the precision of the parasitic resistance in the small signal model. The agreement between the measured S-parameters and simulated ones is excellent over the frequency range up to 40 GHz under multibias condition.

AB - A semi-analytical small signal parameter extraction method for high electron-mobility transistor (HEMT) under different bias conditions is presented. Based on test structure to determine the pad capacitance and parasitic inductances, the semi-analysis method is used to extract parasitic resistances and to improve the precision of the parasitic resistance in the small signal model. The agreement between the measured S-parameters and simulated ones is excellent over the frequency range up to 40 GHz under multibias condition.

KW - High electron-mobility transistor

KW - Multibias condition

KW - Parasitic resistances

KW - Semi-analysis method

KW - Small signal model

UR - https://www.scopus.com/pages/publications/84896045930

U2 - 10.3724/SP.J.1010.2014.00072

DO - 10.3724/SP.J.1010.2014.00072

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AN - SCOPUS:84896045930

SN - 1001-9014

VL - 33

SP - 72

EP - 77

JO - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

JF - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

IS - 1

ER -

A semi-analytical small signal parameter extraction method for millimeter HEMT

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