A novel approach to extracting extrinsic resistances for equivalent circuit model of nanoscale MOSFET

Panpan Yu; Ying Zhou; Ling Sun; Jianjun Gao

doi:10.1002/jnm.2163

A novel approach to extracting extrinsic resistances for equivalent circuit model of nanoscale MOSFET

Panpan Yu
, Ying Zhou
, Ling Sun
, Jianjun Gao^*

^*此作品的通讯作者

物理与电子科学学院

East China Normal University
Nantong University

科研成果: 期刊稿件 › 文章 › 同行评审

4 引用（Scopus）

摘要

A novel extrinsic resistance extraction method of MOSFET at V_gs = V_ds = 0 V from S-parameter measurements is presented in this paper. Simulated and measured results of 90-nm gatelength MOSFET device with a 8 × 0.6 × 12 µm gatewidth (number of gate finger × unit gate width × cells) are compared, and good agreement has been obtained up to 50 GHz. Furthermore, comparisons between the proposed approach and other three methods published are also made in this paper.

源语言	英语
页（从-至）	1044-1054
页数	11
期刊	International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
卷	29
期	6
DOI	https://doi.org/10.1002/jnm.2163
出版状态	已出版 - 1 11月 2016

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title = "A novel approach to extracting extrinsic resistances for equivalent circuit model of nanoscale MOSFET",

abstract = "A novel extrinsic resistance extraction method of MOSFET at Vgs = Vds = 0 V from S-parameter measurements is presented in this paper. Simulated and measured results of 90-nm gatelength MOSFET device with a 8 × 0.6 × 12 µm gatewidth (number of gate finger × unit gate width × cells) are compared, and good agreement has been obtained up to 50 GHz. Furthermore, comparisons between the proposed approach and other three methods published are also made in this paper.",

keywords = "MOSFET, extraction, extrinsic resistance, radio frequency, small signal",

author = "Panpan Yu and Ying Zhou and Ling Sun and Jianjun Gao",

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AU - Yu, Panpan

AU - Zhou, Ying

AU - Sun, Ling

AU - Gao, Jianjun

PY - 2016/11/1

Y1 - 2016/11/1

N2 - A novel extrinsic resistance extraction method of MOSFET at Vgs = Vds = 0 V from S-parameter measurements is presented in this paper. Simulated and measured results of 90-nm gatelength MOSFET device with a 8 × 0.6 × 12 µm gatewidth (number of gate finger × unit gate width × cells) are compared, and good agreement has been obtained up to 50 GHz. Furthermore, comparisons between the proposed approach and other three methods published are also made in this paper.

AB - A novel extrinsic resistance extraction method of MOSFET at Vgs = Vds = 0 V from S-parameter measurements is presented in this paper. Simulated and measured results of 90-nm gatelength MOSFET device with a 8 × 0.6 × 12 µm gatewidth (number of gate finger × unit gate width × cells) are compared, and good agreement has been obtained up to 50 GHz. Furthermore, comparisons between the proposed approach and other three methods published are also made in this paper.

KW - MOSFET

KW - extraction

KW - extrinsic resistance

KW - radio frequency

KW - small signal

UR - https://www.scopus.com/pages/publications/84963699359

U2 - 10.1002/jnm.2163

DO - 10.1002/jnm.2163

M3 - 文章

AN - SCOPUS:84963699359

SN - 0894-3370

VL - 29

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EP - 1054

JO - International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

JF - International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

IS - 6

ER -

A novel approach to extracting extrinsic resistances for equivalent circuit model of nanoscale MOSFET

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