A new method for determination of parasitic capacitances for PHEMTs

Jianjun Gao; Xiuping Li; Hong Wang; Georg Boeck

doi:10.1088/0268-1242/20/6/018

A new method for determination of parasitic capacitances for PHEMTs

Jianjun Gao^*
, Xiuping Li
, Hong Wang
, Georg Boeck

^*此作品的通讯作者

Southeast University, Nanjing
Beijing University of Posts and Telecommunications
Nanyang Technological University
Technical University of Berlin

科研成果: 期刊稿件 › 文章 › 同行评审

29 引用（Scopus）

摘要

A new direct extraction method for the determination of the parasitic capacitances of PHEMTs is presented in this paper. This method is based on a general scalable small signal equivalent circuit model under pinch-off bias condition. The main advantage of this approach is that all parasitic capacitances including C_pg, C_pd and C_pgd can be extracted simultaneously by using PHEMTs of different sizes but with the same pad structure. Good agreement is obtained between modelled and measured results for 2 × 20 νm, 2 × 40 νm, 2 × 60 νm and 2 × 100 νm gate width (number of gate fingers × unit gate width) double heterojunction δ-doped PHEMTs.

源语言	英语
页（从-至）	586-591
页数	6
期刊	Semiconductor Science and Technology
卷	20
期	6
DOI	https://doi.org/10.1088/0268-1242/20/6/018
出版状态	已出版 - 1 6月 2005
已对外发布	是

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abstract = "A new direct extraction method for the determination of the parasitic capacitances of PHEMTs is presented in this paper. This method is based on a general scalable small signal equivalent circuit model under pinch-off bias condition. The main advantage of this approach is that all parasitic capacitances including Cpg, Cpd and Cpgd can be extracted simultaneously by using PHEMTs of different sizes but with the same pad structure. Good agreement is obtained between modelled and measured results for 2 × 20 νm, 2 × 40 νm, 2 × 60 νm and 2 × 100 νm gate width (number of gate fingers × unit gate width) double heterojunction δ-doped PHEMTs.",

author = "Jianjun Gao and Xiuping Li and Hong Wang and Georg Boeck",

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doi = "10.1088/0268-1242/20/6/018",

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T1 - A new method for determination of parasitic capacitances for PHEMTs

AU - Gao, Jianjun

AU - Li, Xiuping

AU - Wang, Hong

AU - Boeck, Georg

PY - 2005/6/1

Y1 - 2005/6/1

N2 - A new direct extraction method for the determination of the parasitic capacitances of PHEMTs is presented in this paper. This method is based on a general scalable small signal equivalent circuit model under pinch-off bias condition. The main advantage of this approach is that all parasitic capacitances including Cpg, Cpd and Cpgd can be extracted simultaneously by using PHEMTs of different sizes but with the same pad structure. Good agreement is obtained between modelled and measured results for 2 × 20 νm, 2 × 40 νm, 2 × 60 νm and 2 × 100 νm gate width (number of gate fingers × unit gate width) double heterojunction δ-doped PHEMTs.

AB - A new direct extraction method for the determination of the parasitic capacitances of PHEMTs is presented in this paper. This method is based on a general scalable small signal equivalent circuit model under pinch-off bias condition. The main advantage of this approach is that all parasitic capacitances including Cpg, Cpd and Cpgd can be extracted simultaneously by using PHEMTs of different sizes but with the same pad structure. Good agreement is obtained between modelled and measured results for 2 × 20 νm, 2 × 40 νm, 2 × 60 νm and 2 × 100 νm gate width (number of gate fingers × unit gate width) double heterojunction δ-doped PHEMTs.

UR - https://www.scopus.com/pages/publications/18744401894

U2 - 10.1088/0268-1242/20/6/018

DO - 10.1088/0268-1242/20/6/018

M3 - 文章

AN - SCOPUS:18744401894

SN - 0268-1242

VL - 20

SP - 586

EP - 591

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 6

ER -

A new method for determination of parasitic capacitances for PHEMTs

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